Effect of high-temperature annealing on the optical and photoluminescence properties of nanocrystalline SiC films

2012 ◽  
Vol 520 (21) ◽  
pp. 6626-6630 ◽  
Author(s):  
A.V. Semenov ◽  
A.V. Lopin ◽  
V.M. Puzikov ◽  
O.M. Vovk ◽  
I.N. Dmitruk ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Photoluminescence Properties ◽  
Sic Films

High Temperature Annealing Amorphous Hydrogenated SiC Films for the Application as Window Layers in Si-Based Solar Cell

2013 ◽  
Vol 401-403 ◽  
pp. 631-634 ◽  
Author(s):  
Rong Dun Hong ◽  
Xia Ping Chen ◽  
Qian Huang ◽  
Yan Nan Xie ◽  
Shao Xiong Wu ◽  
...  
Keyword(s):  
Refractive Index ◽  
Solar Cell ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Window Layer ◽  
High Temperature Annealing ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Sic Films

Amorphous hydrogenated silicon carbide (a-Si1-xCx:H) films were deposited by plasma enhanced chemical vapor deposition and subsequently annealed in N2 atmosphere at 1100 °C. The effects of high temperature annealing on the film’s optical and structural properties were systematically analyzed. It was noted that after high temperature annealing, amount of Si-C bonds increased significantly and SiC nanocrystalline was formed on the surface of the film, which resulted in an increasing refractive index in wavelength range of visible light, a decreasing absorbance index (wavelength<433.5 nm) and an increasing optical bandgap of the film. The changes of the optical properties illustrated that the performance of Si-based solar cell with a-Si1-xCx:H window layer could be improved by high temperature annealing.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

FERROPERM

Alloy Digest ◽  
1993 ◽  
Vol 42 (4) ◽  
Keyword(s):  
Fracture Toughness ◽  
High Temperature ◽  
Physical Properties ◽  
Saturation Magnetization ◽  
Pure Iron ◽  
Magnetic Alloy ◽  
High Saturation Magnetization ◽  
High Temperature Annealing ◽  
Soft Magnetic ◽  
Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

Preparation of silicon-based nanowires through high-temperature annealing

2018 ◽  
Vol 42 (1) ◽  
pp. 149-158
Author(s):  
SHUANG XI ◽  
SHUANGSHUANG ZUO ◽  
YING LIU ◽  
YINLONG ZHU ◽  
YUTU YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Silicon Based

scholarly journals High Crystallinity and Highly Relaxed Al 0.60 Ga 0.40 N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing

2020 ◽  
Vol 217 (14) ◽  
pp. 1900868 ◽  
Author(s):  
Shohei Teramura ◽  
Yuta Kawase ◽  
Yusuke Sakuragi ◽  
Sho Iwayama ◽  
Motoaki Iwaya ◽  
...  
Keyword(s):  
High Temperature ◽  
Growth Mode ◽  
High Temperature Annealing ◽  
High Crystallinity ◽  
Mode Control
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