Silicon-based light emitting diodes on silicon and glass substrates using a low temperature multilayered nanocrystalline structure

2012 ◽  
Vol 520 (15) ◽  
pp. 5021-5028 ◽  
Author(s):  
S. Darbari ◽  
F. Karbassian ◽  
S. Mohajerzadeh ◽  
Y. Abdi ◽  
M. Robertson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Light Emitting Diodes ◽  
Nanocrystalline Structure ◽  
Light Emitting ◽  
Glass Substrates ◽  
Silicon Based

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

scholarly journals Bright and efficient blue polymer light emitting diodes with reduced operating voltages processed entirely at low-temperature

2015 ◽  
Vol 3 (36) ◽  
pp. 9327-9336 ◽  
Author(s):  
R. L. Z. Hoye ◽  
K. P. Musselman ◽  
M. R. Chua ◽  
A. Sadhanala ◽  
R. D. Raninga ◽  
...  
Keyword(s):  
Low Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Electron Injector ◽  
Polymer Light Emitting Diodes ◽  
Bright Blue

Efficient and bright blue polyfluorene LEDs, processed entirely below 150 °C, are obtained using an atmospherically synthesized, tunable oxide electron-injector.

Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer

2012 ◽  
Vol 33 (10) ◽  
pp. 104002 ◽  
Author(s):  
Panpan Li ◽  
Hongjian Li ◽  
Yiyun Zhang ◽  
Zhicong Li ◽  
Meng Liang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting

Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN∕GaN light emitting diodes

2008 ◽  
Vol 103 (2) ◽  
pp. 024503 ◽  
Author(s):  
M. Pavesi ◽  
M. Manfredi ◽  
F. Rossi ◽  
M. Meneghini ◽  
G. Meneghesso ◽  
...  
Keyword(s):  
Low Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Preferential Orientation of Tetrahedral Silicon-Based Hosts in Phosphorescent Organic Light-Emitting Diodes

ACS Omega ◽  
2018 ◽  
Vol 3 (8) ◽  
pp. 9989-9996 ◽  
Author(s):  
Sunyoung Sohn ◽  
Kwang Hun Park ◽  
Soon-Ki Kwon ◽  
Han-Koo Lee ◽  
Hyungju Ahn ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Preferential Orientation ◽  
Light Emitting ◽  
Organic Light ◽  
Silicon Based

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

2002 ◽  
Vol 81 (16) ◽  
pp. 2938-2940 ◽  
Author(s):  
A. Chitnis ◽  
R. Pachipulusu ◽  
V. Mandavilli ◽  
M. Shatalov ◽  
E. Kuokstis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Single Quantum ◽  
Ultraviolet Emission ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Deep Ultraviolet Emission

Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes

2012 ◽  
Vol 101 (25) ◽  
pp. 253512 ◽  
Author(s):  
Craig G. Moe ◽  
Gregory A. Garrett ◽  
Paul Rotella ◽  
Hongen Shen ◽  
Michael Wraback ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes
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