The OFF to ON switching time and ON state consolidation in write-once-read-many-times memory devices based on doped and undoped carbon-sphere/polymer composites

2012 ◽  
Vol 520 (13) ◽  
pp. 4427-4431 ◽  
Author(s):  
Wagner S. Machado ◽  
Messai A. Mamo ◽  
Neil J. Coville ◽  
Ivo A. Hümmelgen
2018 ◽  
Vol 20 (8) ◽  
pp. 5771-5779 ◽  
Author(s):  
Yanmei Sun ◽  
Dianzhong Wen ◽  
Xuduo Bai

Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles.


2013 ◽  
Vol 24 (12) ◽  
pp. 125203 ◽  
Author(s):  
Messai A Mamo ◽  
Alan O Sustaita ◽  
Zikhona N Tetana ◽  
Neil J Coville ◽  
Ivo A Hümmelgen

Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.


2017 ◽  
Vol 39 (4) ◽  
pp. 219-226
Author(s):  
O.V. Maruzhenko ◽  
◽  
Ye.P. Mamunya ◽  
G. Boiteux ◽  
S. Pruvost ◽  
...  

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