Low temperature growth of nanoblade In2O3 thin films by plasma enhanced chemical vapor deposition: Morphology control and lithium storage properties

2012 ◽  
Vol 521 ◽  
pp. 137-140 ◽  
Author(s):  
Jie Zheng ◽  
Rong Yang ◽  
Yu Lou ◽  
Wei Li ◽  
Xingguo Li
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Morphology Control ◽  
Lithium Storage ◽  
Temperature Growth ◽  
Deposition Morphology ◽  
Storage Properties

Low Temperature Chemical Vapor Deposition of Titanium Nitride Thin Films With Hydrazine and Tetrakis-(dimethylamide)Titanium

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Air Exposure ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Reducing Ability ◽  
Tin Thin Films

AbstractHydrazine and tetrakis-(dimethylamido)titanium have been used as precursors for the low temperature chemical vapor deposition of TiN thin films between 50°C and 200°C at growth rates between 5 to 35 nm/min. At hydrazine to TDMAT ratios of 50:1 and 100:1 the resulting films show an increase in the Ti:N ratio with increasing deposition temperature. They contain 2% carbon, and varying amounts of oxygen up to 36% as a result of diffusion after air exposure. The low temperature growth is improved when hydrazine-ammonia mixtures containing as little as 1.9% hydrazine are used. Their Ti:N ratio is almost 1:1 and they contain no carbon or oxygen according to RBS. The TiN films grown from pure hydrazine or the hydrazine-ammonia mixture have some crystallinity according to x-ray diffraction and their resistivity is on the order of 104µω cm. The low temperature growth is attributed to the weak N–N bond in hydrazine and its strong reducing ability. In these films, the Ti:N ratio is approximately 1:1.

Low Temperature Growth of Wafer-Scale 2D MoS2 Thin Films By Pulsed Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1956-1956
Author(s):  
Jeong-Hun Choi ◽  
Seung Won Lee ◽  
Hyo-Bae Kim ◽  
Min-Ji Ha ◽  
Ji-Hoon Ahn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pulsed Plasma ◽  
Temperature Growth ◽  
Wafer Scale ◽  
Low Temperature Growth
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