Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

2012 ◽  
Vol 522 ◽  
pp. 33-35 ◽  
Author(s):  
J.W. Sun ◽  
V. Jokubavicius ◽  
R. Liljedahl ◽  
R. Yakimova ◽  
S. Juillaguet ◽  
...  
2009 ◽  
Vol 24 (5) ◽  
pp. 1730-1734 ◽  
Author(s):  
Hucheng Yang ◽  
G. Lakshminarayana ◽  
Yu Teng ◽  
Shifeng Zhou ◽  
Jianrong Qiu

Sm3+, Ce3+ codoped Al2O3–La2O3–SiO2 glasses were prepared and their luminescence properties were characterized. Blue-cyan to orange-red tunable luminescence was observed from these glasses with different excitation wavelengths ranging from 385 to 410 nm. White light emission with internal luminescence efficiency 42% has been observed using commercially available purple light-emitting-diode excitation. The energy transfer between Ce3+ and Sm3+ has also been investigated from fluorescence decay curves and spectral properties.


2018 ◽  
Vol 100 ◽  
pp. 26-31 ◽  
Author(s):  
Irish Valerie B. Maggay ◽  
Kai-Yuan Yeh ◽  
Bingfu Lei ◽  
Mikhail G. Brik ◽  
Michal Piasecki ◽  
...  

2020 ◽  
pp. 174751982092537
Author(s):  
Roghaye Soltani ◽  
Fatemeh Abdollahi ◽  
Arash Ghaderi

In this study, we have developed a catalyst-free procedure for denitrative etherification of electron-deficient nitroarenes. In this method, the reaction failed in the dark but was enabled by white light-emitting diode light (6 W) in the presence of NaOH/dimethylformamide at room temperature with short reaction times. Interestingly, the reaction in the dark is completed almost immediately once a small quantity of water is added to the reaction mixture. Ultraviolet irradiation (λ = 254 nm) was not effective for this reaction to proceed.


2006 ◽  
Vol 88 (16) ◽  
pp. 161908 ◽  
Author(s):  
Xianqing Piao ◽  
Takashi Horikawa ◽  
Hiromasa Hanzawa ◽  
Ken-ichi Machida

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.


Sign in / Sign up

Export Citation Format

Share Document