Study on the antimony tin oxide as a hole injection layer for polymer light emitting diodes

2012 ◽  
Vol 520 (11) ◽  
pp. 4068-4073 ◽  
Author(s):  
In Sung Song ◽  
Soo Won Heo ◽  
Ja Ram Ku ◽  
Doo Kyung Moon
2011 ◽  
Vol 12 (3) ◽  
pp. 504-508 ◽  
Author(s):  
Sha Wu ◽  
Shaohu Han ◽  
Yina Zheng ◽  
Hua Zheng ◽  
Nanliu Liu ◽  
...  

2013 ◽  
Vol 1 (3) ◽  
pp. 531-535 ◽  
Author(s):  
Kai-Wei Tsai ◽  
Sung-Nien Hsieh ◽  
Tzung-Fang Guo ◽  
Yao-Jane Hsu ◽  
Alex K.-Y. Jen ◽  
...  

2009 ◽  
Vol 2009 ◽  
pp. 1-4 ◽  
Author(s):  
Luis Morgado ◽  
Luis Alcácer ◽  
Jorge Morgado

The efficiency of light-emitting diodes (LEDs) based on poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-1,4-benzo-{2,1′-3}-thiadiazole)], F8BT, is optimized upon simultaneous doping with a hole and an electron trapping molecule, namely, N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, respectively. It is shown that, for devices with poly(3,4-ethylene dioxythiophene) doped with polystyrene sulfonic acid as hole-injection layer material and magnesium cathodes, the efficiency is nearly doubled (from ca. 2.5 to 3.7 cd/A) upon doping with ca. 0.34% by weight of both compounds.


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