Characterization of inhomogeneity in TiO2 thin films prepared by pulsed dc reactive magnetron sputtering

2011 ◽  
Vol 520 (1) ◽  
pp. 272-279 ◽  
Author(s):  
M. Horprathum ◽  
P. Eiamchai ◽  
P. Chindaudom ◽  
N. Nuntawong ◽  
V. Patthanasettakul ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Tio2 Thin Films ◽  
Pulsed Dc ◽  
Dc Reactive Magnetron Sputtering

Growth and characterization of NiO thin films prepared by dc reactive magnetron sputtering

2011 ◽  
Vol 13 (2) ◽  
pp. 314-320 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
A. Sivasankar Reddy ◽  
Kee-Sun Lee ◽  
P. Sreedhara Reddy
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering

Pulsed DC Reactive Magnetron Sputtering of AlN Thin Films on High Frequency LTCC Substrates

2003 ◽  
Vol 783 ◽  
Author(s):  
Jung W. Lee ◽  
Jerome J. Cuomo ◽  
Baxter F. Moody ◽  
Yong S. Cho ◽  
Roupen L. Keusseyan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Crystal Orientation ◽  
Broad Band ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Pulsed Dc ◽  
Dc Reactive Magnetron Sputtering ◽  
Small Grains ◽  
Xrd Patterns

ABSTRACTThis preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.

Surface characterization of TiO2 thin films obtained by high-energy reactive magnetron sputtering

2008 ◽  
Vol 254 (14) ◽  
pp. 4396-4400 ◽  
Author(s):  
R. Wasielewski ◽  
J. Domaradzki ◽  
D. Wojcieszak ◽  
D. Kaczmarek ◽  
A. Borkowska ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface Characterization ◽  
High Energy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Tio2 Thin Films
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