Variation of residual stress in cubic boron nitride film caused by hydrogen addition during unbalanced magnetron sputtering

2011 ◽  
Vol 519 (22) ◽  
pp. 7871-7874 ◽  
Author(s):  
H.-S. Kim ◽  
J.-K. Park ◽  
W.-S. Lee ◽  
Y.-J. Baik
Keyword(s):  
Residual Stress ◽  
Boron Nitride ◽  
Magnetron Sputtering ◽  
Cubic Boron Nitride ◽  
Nitride Film ◽  
Hydrogen Addition ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

The Microstructure and Properties of CrNx Films Synthesized by Unbalanced Magnetron Sputtering

2008 ◽  
Vol 373-374 ◽  
pp. 176-179
Author(s):  
Yan Ping Wu ◽  
Yong Xiang Leng ◽  
Sun Hong ◽  
Sheng Fa Zhu ◽  
Nan Huang ◽  
...  
Keyword(s):  
Residual Stress ◽  
Corrosion Resistance ◽  
Magnetron Sputtering ◽  
Corrosion Properties ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Wear And Corrosion ◽  
Structure Thickness ◽  
Wear And Corrosion Resistance ◽  
N2 Flow Rate

CrNx film was widely used in mechanical engineering field because of its excellent anti-wear and corrosion resistance properties. While most of research was focused on mechanical properties, little attention had been paid to the corrosion resistance and residual stress of CrNx film . In this paper, CrNx films were deposited on silicon wafer (100) and iron substrate by unbalanced magnetron sputtering system (UBMS) at different N2 flow. Then the structure, thickness, residual stress, micro-hardness, wear-resistance and anti-corrosion properties of CrNx films were investigated. The results showed that the phase composition of CrNx films transformed from Cr, single phase Cr2N, Cr2N and CrN coexist to single CrN with the N2 flow rate increasing. The CrNx films composed with Cr2N phase, which deposited at 6 sccm N2 flow, had the highest microhardness and had higher compressive residual stress. Whereas the CrNx films with CrN and Cr2N phase coexist had the best wear and corrosion resistance.

scholarly journals Structure and Properties of Nanocrystalline (TiZr)xN1−xThin Films Deposited by DC Unbalanced Magnetron Sputtering

2016 ◽  
Vol 2016 ◽  
pp. 1-12 ◽  
Author(s):  
Yu-Wei Lin ◽  
Chia-Wei Lu ◽  
Ge-Ping Yu ◽  
Jia-Hong Huang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Nitrogen Flow ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Nitrogen Flow Rate ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

This study aims to investigate the effects of nitrogen flow rate (0–2.5 sccm) on the structure and properties of TiZrN films. Nanocrystalline TiZrN thin films were deposited on Si (001) substrates by unbalanced magnetron sputtering. The major effects of the nitrogen flow rate were on the phase, texture, N/(Ti + Zr) ratio, thickness, hardness, residual stress, and resistivity of the TiZrN films. The nitrogen content played an important role in the phase transition. With increasing nitrogen flow rate, the phase changed from mixed TiZr and TiZrN phases to a single TiZrN phase. The X-ray diffraction results indicated that (111) was the preferred orientation for all TiZrN specimens. The N/(Ti + Zr) ratio of the TiZrN films first increased with increasing nitrogen flow rate and then stabilized when the flow rate further increased. When the nitrogen flow rate increased from 0.4 to 1.0 sccm, the hardness and residual stress of the TiZrN thin film increased, whereas the electrical resistivity decreased. None of the properties of the TiZrN thin films changed with nitrogen flow rate above 1.0 sccm because the films contained a stable single phase (TiZrN). At high nitrogen flow rates (1.0–2.5 sccm), the average hardness and resistivity of the TiZrN thin films were approximately 36 GPa and 36.5 μΩ·cm, respectively.

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