A study on crack propagation and electrical resistance change of sputtered aluminum thin film on poly ethylene terephthalate substrate under stretching

2011 ◽  
Vol 519 (22) ◽  
pp. 7918-7924 ◽  
Author(s):  
Mohammad M. Hamasha ◽  
Khalid Alzoubi ◽  
James C. Switzer ◽  
Susan Lu ◽  
Seshu B. Desu ◽  
...  
2004 ◽  
Vol 814 ◽  
Author(s):  
B. Hekmatshoar ◽  
D. Shahrjerdi ◽  
S. Mohajerzadeh ◽  
A. Khakifirooz ◽  
M. Robertson ◽  
...  

AbstractDevice-quality polycrystalline Ge layers have been grown on flexible poly-ethylene terephthalate (PET) substrates by means of stress-assisted Cu-induced crystallization at temperatures as low as 130°C and employed for fabrication of depletion-mode poly-Ge thin-film transistors (TFTs). These TFTs show an ON/OFF ratio of 104and an effective hole mobility of 110 cm2/Vs. The stress-assisted crystallization technique has been extended to crystallize SiGe alloys at low temperatures for possible fabrication of poly-SiGe TFTs on plastic. As a result, poly-Ge seeded poly-crystalline SiGe layers with 40% Si content are grown at a low annealing temperature of 180°C in the presence of 0.05% equivalent compressive strain.


2011 ◽  
Vol 519 (18) ◽  
pp. 6033-6038 ◽  
Author(s):  
Mohammad M. Hamasha ◽  
Khalid Alzoubi ◽  
Susan Lu ◽  
Seshu B. Desu

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