Characteristics of Schottky barrier silicon nanocluster floating gate flash memory

2011 ◽  
Vol 519 (18) ◽  
pp. 6174-6177
Author(s):  
Daeho Son ◽  
Jeongho Kim ◽  
Kyungsu Lee ◽  
Sunghwan Won ◽  
Eunkyeom Kim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Flash Memory ◽  
Floating Gate

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

scholarly journals Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Seongin Hong ◽  
Junwoo Park ◽  
Jung Joon Lee ◽  
Sunjong Lee ◽  
Kyungho Yun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Flash Memory ◽  
Floating Gate ◽  
Bending Test ◽  
Light Illumination ◽  
Transition Metal Dichalcogenide ◽  
Large Memory ◽  
Temperature Solution ◽  
Multilevel Memory ◽  
Floating Layer

AbstractTwo-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS2), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS2 flash memory by combining a MoS2 channel with a PEDOT:PSS floating layer. The proposed MoS2 memory devices exhibit a switching ratio as high as 2.3 × 107, a large memory window (54.6 ± 7.80 V), and high endurance (>1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS2 and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.

A Novel Dual-Doping Floating-Gate (DDFG) Flash Memory Featuring Low Power and High Reliability Application

2007 ◽  
Vol 28 (7) ◽  
pp. 622-624 ◽  
Author(s):  
Yan Li ◽  
Ru Huang ◽  
Yimao Cai ◽  
Falong Zhou ◽  
Xiaonan Shan ◽  
...  
Keyword(s):  
Low Power ◽  
Flash Memory ◽  
High Reliability ◽  
Floating Gate

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

2016 ◽  
Author(s):  
Tomoharu Tanaka ◽  
Mark Helm ◽  
Tommaso Vali ◽  
Ramin Ghodsi ◽  
Koichi Kawai ◽  
...  
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory

Unified Endurance Degradation Model of Floating Gate NAND Flash Memory

2013 ◽  
Vol 60 (6) ◽  
pp. 2031-2037 ◽  
Author(s):  
Albert Fayrushin ◽  
Chang-Hyun Lee ◽  
Youngwoo Park ◽  
Jeong-Hyuk Choi ◽  
Chilhee Chung
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Degradation Model

3-D Observation of dopant distribution at NAND flash memory floating gate using Atom probe tomography

2015 ◽  
Vol 11 (1) ◽  
pp. 60-64 ◽  
Author(s):  
Ji-hyun Lee ◽  
Byeong-Kyu Chae ◽  
Joong-Jeong Kim ◽  
Sun Young Lee ◽  
Chan Gyung Park
Keyword(s):  
Flash Memory ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Floating Gate ◽  
Nand Flash ◽  
Dopant Distribution ◽  
Nand Flash Memory

Modified Floating Gate and IPD Profile for Better Cell Performance of Sub-50 nm NAND Flash Memory

2010 ◽  
Author(s):  
Jennifer Lequn Liu ◽  
Fernando Gonzalez ◽  
Y. Jeff Hu ◽  
Jixin Yu ◽  
Charan Srinivasan ◽  
...  
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Cell Performance ◽  
Nand Flash ◽  
Nand Flash Memory
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