Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Investigation of defects with electron spin resonance

2011 ◽  
Vol 519 (14) ◽  
pp. 4519-4522 ◽  
Author(s):  
Lihong Xiao ◽  
Oleksandr Astakhov ◽  
Tao Chen ◽  
Martin Stutzmann ◽  
Friedhelm Finger
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Hot Wire ◽  
Spin Resonance ◽  
Doped Silicon

Stress effects on the electron-spin-resonance spectra of Er in gold and silver thin films

1981 ◽  
Vol 23 (7) ◽  
pp. 3149-3158 ◽  
Author(s):  
C. A. Pelá ◽  
J. F. Suassuna ◽  
G. E. Barberis ◽  
C. Rettori
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Stress Effects ◽  
Spin Resonance ◽  
Silver Thin Films

Electron spin resonance in laser-crystallized polycrystalline silicon-germanium thin films

2010 ◽  
Vol 207 (3) ◽  
pp. 570-573 ◽  
Author(s):  
M. Weizman ◽  
L.-P. Scheller ◽  
N. H. Nickel ◽  
K. Lips ◽  
B. Yan
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Spin Resonance

Electron spin resonance investigation of oxygen-vacancy-related defects in BaTiO3 thin films

2005 ◽  
Vol 87 (2) ◽  
pp. 022903 ◽  
Author(s):  
V. V. Laguta ◽  
A. M. Slipenyuk ◽  
I. P. Bykov ◽  
M. D. Glinchuk ◽  
M. Maglione ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Oxygen Vacancy ◽  
Electron Spin ◽  
Resonance Investigation ◽  
Spin Resonance ◽  
Electron Spin Resonance Investigation

Low temperature frequency dependence of the electron spin resonance absorption in heavily phosphorus-doped silicon

1970 ◽  
Vol 48 (24) ◽  
pp. 2930-2936 ◽  
Author(s):  
F. T. Hedgcock ◽  
T. W. Raudorf
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Magnetic Moments ◽  
Charge Carriers ◽  
Mobile Charge ◽  
Local Moments ◽  
Spin Resonance ◽  
Doped Silicon ◽  
Pauli Paramagnetism ◽  
Phosphorus Doped

Electron spin resonance (ESR) measurements have been made on a phosphorus-doped silicon specimen (n = 1.38 × 1019/cc) in the liquid helium temperature range. A single line with a g factor of approximately 2 was observed for resonant magnetic fields of 540, 3230, and 12 590 G at 1517, 9010, and 35 200 MHz respectively. The experimentally determined magnetization is compared with the magnetizations expected from the following sources: (a) un-ionized charge carriers or local magnetic moments obeying a Curie law, (b) mobile carriers experiencing an exchange interaction with local magnetic moments, and (c) mobile charge carriers showing only Pauli paramagnetism. The magnetization derived from the ESR data exhibits a linear dependence with magnetic field and no temperature dependence. This is consistent with the Pauli paramagnetism expected for mobile charge carriers in the absence of any interaction with local moments.

Raman and Electron Spin Resonance Investigations of as Prepared and Thermal Annealed Cluster Beam Deposited Carbon Thin Films

2005 ◽  
Vol 887 ◽  
Author(s):  
Giuseppe Compagnini ◽  
Orazio Puglisi ◽  
Mircea Chipara
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Resonance Line ◽  
Carbon Cluster ◽  
Single Line ◽  
Carbon Clusters ◽  
Cluster Beam ◽  
Spin Resonance

ABSTRACTNanostructured amorphous carbon thin films deposited by a Low Energy Carbon Cluster Beam Deposition technique have been characterized by Raman spectroscopy and Electron Spin Resonance (ESR). This study focuses on the correlation between carbon cluster structure and sp2 related defects. The ESR spectrum of as prepared and thermally annealed carbon clusters is a single line located near the free electron g-factor. Resonance lines were accurately fitted by a single line symmetric and narrow Lorentzian line. The resonance line parameters (line position, line amplitude, and line width) were found to be extremely sensitive to the thermal treatment of the as deposited samples. The paramagnetic centres are randomly distributed and correlated with the nanosized nature of the investigated system. The absence of the resonance line asymmetry, typical for the ESR spectra of conducting carbaceneous materials, confirms the small size of carbon nanoclusters and indicates poor electrical contacts between them. The resonance line parameters (position, intensity, and width) are not affected by the orientation of the carbon cluster film relative to the direction of the external magnetic field. The evolution of the ESR signal upon thermal treatments is sensitive to the increase of the sp2 average domain size as revealed by Raman spectroscopy. The Raman spectrum of as obtained and thermally annealed carbon clusters, in the domain 1000 cm−1 to 2000 cm−1 shows two Lorentzian lines located at 1300 cm−1 and 1550 cm−1 representing the D and G bands. The position and amplitude of these lines were found to be affected by thermal annealing.

Conduction-electron spin resonance in zinc-blende GaN thin films

1993 ◽  
Vol 48 (20) ◽  
pp. 15144-15147 ◽  
Author(s):  
M. Fanciulli ◽  
T. Lei ◽  
T. D. Moustakas
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Conduction Electron ◽  
Zinc Blende ◽  
Spin Resonance

Electron spin-resonance studies of conduction electrons in phosphorus-doped silicon nanocrystals

2007 ◽  
Vol 101 (3) ◽  
pp. 033504 ◽  
Author(s):  
Kazuaki Sumida ◽  
Keiichi Ninomiya ◽  
Minoru Fujii ◽  
Kazuyoshi Fujio ◽  
Shinji Hayashi ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Silicon Nanocrystals ◽  
Conduction Electrons ◽  
Spin Resonance ◽  
Doped Silicon ◽  
Phosphorus Doped
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