A comparison between bottom contact and top contact all organic field effect transistors assembled by soft lithography

2007 ◽  
Vol 515 (19) ◽  
pp. 7551-7555 ◽  
Author(s):  
P. Cosseddu ◽  
A. Bonfiglio
Keyword(s):  
Soft Lithography ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Bottom Contact ◽  
Top Contact

Inkjet-Printed Organic Electrodes for Bottom-Contact Organic Field-Effect Transistors

2011 ◽  
Vol 21 (4) ◽  
pp. 786-791 ◽  
Author(s):  
Jing Zhang ◽  
Yan Zhao ◽  
Zhongming Wei ◽  
Yimeng Sun ◽  
Yudong He ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Bottom Contact ◽  
Organic Electrodes

Doped bottom-contact organic field-effect transistors

2018 ◽  
Vol 29 (28) ◽  
pp. 284001 ◽  
Author(s):  
Shiyi Liu ◽  
Paul Billig ◽  
Akram Al-Shadeedi ◽  
Vikash Kaphle ◽  
Björn Lüssem
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Bottom Contact

High-resolution organic field-effect transistors manufactured by electrohydrodynamic inkjet printing of doped electrodes

2020 ◽  
Vol 8 (43) ◽  
pp. 15219-15223
Author(s):  
Jing Zhang ◽  
Bowen Geng ◽  
Shuming Duan ◽  
Congcong Huang ◽  
Yue Xi ◽  
...  
Keyword(s):  
High Resolution ◽  
Inkjet Printing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Top Contact

A top-contact, sub-5 μm resolution OFET is realized using inkjet printed electrodes with different F4-TCNQ doping concentrations.

Soft Lithography Fabrication of Fully Flexible and Transparent all Organic FETs for Large Area Applications

2006 ◽  
Vol 965 ◽  
Author(s):  
Piero Cosseddu ◽  
Emanuele Orgiu ◽  
Annalisa Bonfiglio
Keyword(s):  
Active Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Large Area ◽  
Semiconductor Interface ◽  
Contact Printing ◽  
Bottom Contact ◽  
Contact Devices ◽  
Top Contact ◽  
Capacitance Effects

ABSTRACTFully flexible and transparent all organic field effect transistors were fabricated by means of an innovative and inexpensive technique. A 1.8μm thick polyethylenetetherephtalate sheet, Mylar® (Du Pont), was used as gate dielectric and at the same time as mechanical support for the whole structure. We used pentacene, deposited by thermal sublimation, as semiconducting layer, whereas poly(ethylene-dioxythiophene)/polystyrene sulfonate (PEDOT/PSS) was used for the realization of the electrodes. Gate electrodes were realized by spin coating, while source and drain electrodes were patterned by micro-contact printing. We fabricated typical p-type field effect transistors, with mobilities up to 2 × 10−1cm2/Vs and Ion/Ioff up to 105, in a very simple and inexpensive way. It is worth to note that this technique allows the realization of bottom contact and top contact transistors. We realized both bottom contact and top contact devices on the same substrate and with the same active layer and we investigated how the structure itself and the active layer morphology influence the electrical properties in terms of hole mobility, Series Contact Resistance and parasitic capacitance effects. The comparison between top-contact and bottom-contact devices shows interesting marked differences that can be mainly attributed to a different PEDOT:PSS/semiconductor interface quality, influencing the most meaningful parameters. The flexibility of the obtained structure and the easy scalability of the technological process, suitable for roll to roll mass production processes, open the way for economic production of high-resolution organic devices

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