Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN

2007 ◽  
Vol 515 (10) ◽  
pp. 4509-4513 ◽  
Author(s):  
C.B. Soh ◽  
S.J. Chua ◽  
P. Chen ◽  
D.Z. Chi ◽  
W. Liu ◽  
...  
Keyword(s):  
Deep Level ◽  
Free Standing ◽  
Gan Heterostructure

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

2016 ◽  
Vol 25 (6) ◽  
pp. 067305
Author(s):  
Qing Zhu ◽  
Xiao-Hua Ma ◽  
Wei-Wei Chen ◽  
Bin Hou ◽  
Jie-Jie Zhu ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Surface States ◽  
Transient Spectroscopy ◽  
Gan Heterostructure

Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

2011 ◽  
Vol 208 (5) ◽  
pp. 1191-1194 ◽  
Author(s):  
Yasuhiro Isobe ◽  
Daisuke Iida ◽  
Tatsuyuki Sakakibara ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Flux Method ◽  
Free Standing ◽  
Gan Heterostructure

MEASUREMENT OF ELECTRICAL ACTIVATION ENERGY IN BLACK CVD DIAMOND USING IMPEDANCE SPECTROSCOPY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4487-4492
Author(s):  
HAITAO YE ◽  
OLIVER A. WILLIAMS ◽  
RICHARD B. JACKMAN
Keyword(s):  
Activation Energy ◽  
Deep Level ◽  
Diamond Films ◽  
Activation Energies ◽  
Electrical Activation ◽  
Capacitance Measurement ◽  
Free Standing ◽  
Low Frequencies ◽  
Wide Range ◽  
Diamond Grain

Dc current-voltage (I-V) measurement, Hall measurement, Deep-level transient-spectroscopy (DLTS), and flatband capacitance measurement have been used to investigate electrical activation energies in diamond. However, the deviations still exist in the published activation energies obtained by these methods. In this paper, we report the first measurement of impedance on free-standing diamond films from 0.1Hz to 10MHz up to 300°C. A wide range of CVD materials have been investigated, but here we concentrate on 'black' diamond grown by MWPECVD. The Cole-Cole (Z′ via Z″) plots are well fitted to a RC parallel circuit model and the equivalent Resistance and Capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 62 MΩ at room temperature to 4 KΩ at 300°C, with an activation energy around 0.15eV. The equivalent capacitance is maintained at the level of 102 pF up to 300°C suggesting that the diamond grain boundaries are dominating the conduction. At 400°C, the impedance at low frequencies shows a linear tail, which can be explained that the AC polarization of diamond/Au interface occurs.

Free-Standing ZnO Nanorods and Nanowalls by Aqueous Solution Method

2008 ◽  
Vol 8 (9) ◽  
pp. 4688-4691 ◽  
Author(s):  
Dae-Hee Kim ◽  
Sam-Dong Lee ◽  
Kyoung-Kook Kim ◽  
Gyeong-Su Park ◽  
Ji-Myon Lee ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Solution Method ◽  
Deep Level ◽  
Free Exciton ◽  
Zno Nanorods ◽  
Growth Conditions ◽  
Hexagonal Structure ◽  
Nitrate Hexahydrate ◽  
Free Standing ◽  
Aqueous Solution Method

Large quantity of free-standing ZnO nanorods and nanowalls were synthesized at low temperature of below 100 °C using zinc acetate, zinc nitrate hexahydrate, and hexamethylenetetramine by using a simple aqueous solution method. The general morphology of the grown ZnO nanostructures which include nanorods and nanowalls was strongly influenced by growth conditions. It was found that the grown ZnO nanorods are of a single-crystalline hexagonal structure and preferred c-axis growth orientation. ZnO nanorods were of better crystallinity than ZnO nanowalls, due to the higher growth temperature used to grow ZnO nanorods. Strong free exciton emission bands with relatively weak deep level emission were clearly observed from ZnO nanorods and nanowalls, indicating their good optical properties.

Deep-Level Characterization of Free-Standing HVPE-grown GaN Substrates Using Transparent Conductive Polyaniline Schottky Contacts

2011 ◽  
Vol 1309 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Nobuyuki Matsuki ◽  
Mickael Lozac’h ◽  
Kazuaki Sakoda ◽  
Masatomo Sumiya
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Schottky Contacts ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Free Standing ◽  
Low Concentrations ◽  
Metal Organic ◽  
Conductive Polyaniline

ABSTRACTWe have investigated electronic deep levels in free-standing n-GaN substrates grown by hydride vapor phase epitaxy (HVPE), by means of a steady-state photo-capacitance spectroscopy technique, using transparent conductive polyaniline Schottky contacts. Two specific deep levels located at ~1.7 and ~3.1 eV below the conduction band were revealed to be significantly reduced compared to those in n-GaN layers grown by metal-organic chemical vapor deposition. This difference between them is probably due to extremely low concentrations of threading dislocations and residual C impurities in the HVPE-grown n-GaN substrates.

scholarly journals Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045311 ◽  
Author(s):  
H. Yamada ◽  
H. Chonan ◽  
T. Takahashi ◽  
T. Yamada ◽  
M. Shimizu
Keyword(s):  
Deep Level ◽  
Free Standing ◽  
Si Doped
Sign in / Sign up

Export Citation Format

Share Document