Effect of back-contact barrier on thin-film CdTe solar cells

2006 ◽  
Vol 510 (1-2) ◽  
pp. 320-324 ◽  
Author(s):  
S.H. Demtsu ◽  
J.R. Sites
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Contact Barrier

scholarly journals Nanocomposite (CuS) (ZnS)1 thin film back contact for CdTe solar cells: Toward a bifacial device

2018 ◽  
Vol 186 ◽  
pp. 227-235 ◽  
Author(s):  
Kamala Khanal Subedi ◽  
Ebin Bastola ◽  
Indra Subedi ◽  
Zhaoning Song ◽  
Khagendra P. Bhandari ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Back Contact ◽  
Cdte Solar Cells

scholarly journals Buffer/absorber interface recombination reduction and improvement of back-contact barrier height in CdTe solar cells

2019 ◽  
Vol 685 ◽  
pp. 385-392 ◽  
Author(s):  
Sanjoy Paul ◽  
Craig Swartz ◽  
Sandeep Sohal ◽  
Corey Grice ◽  
Sandip Singh Bista ◽  
...  
Keyword(s):  
Solar Cells ◽  
Barrier Height ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Interface Recombination ◽  
Contact Barrier

Development of Cu‐doped ZnTe as a back‐contact interface layer for thin‐film CdS/CdTe solar cells

1996 ◽  
Vol 14 (3) ◽  
pp. 806-812 ◽  
Author(s):  
T. A. Gessert ◽  
A. R. Mason ◽  
P. Sheldon ◽  
A. B. Swartzlander ◽  
D. Niles ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Interface Layer ◽  
Back Contact ◽  
Contact Interface ◽  
Cdte Solar Cells

scholarly journals Investigation of Thin Film Solar Cells on CdS/CdTe Base with Different Back Contacts

2010 ◽  
Vol 74 ◽  
pp. 119-123
Author(s):  
G. Khrypunov ◽  
A. Meriuts ◽  
H. Klochko ◽  
T. Shelest ◽  
A. Khrypunova
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Potential Barrier ◽  
Negative Impact ◽  
Boundary Surface ◽  
Base Layer ◽  
Wave Radiation ◽  
Back Contact ◽  
Recombination Mechanism ◽  
Cdte Solar Cells

The peculiarities of photo-electric processes in thin film CdS/CdTe solar cells (SC) with different back electrodes (Cu/Au, ITO, Cu/ITO) have been studied. As it was established by capacitance – voltage (C – V) characteristics, the potential barrier heights for CdTe/Cu/Au and CdTe/ITO were 0.3 eV and 2.2 eV, respectively. The concentrations of charge carriers near back contact consisted 91020 m–3 and 21021 m–3, respectively. A high carrier concentration and high potential barrier of the ITO back contact caused the tunnel – recombination mechanism of the charge transport. The investigations of CdS/CdTe/ITO SC spectral photosensitivity testify a negative impact of the developed grain-boundary surface of the base layer on the processes of diffusion and separation of non-equilibrium current carriers generated by short-wave radiation. It is shown that the deposition of Cu nanolayer before the deposition of ITO films give stable efficiency 10 % for bifacial CdS/CdTe solar cells.

First-principles Study of Back Contact Effects on CdTe Thin Film Solar Cells

2010 ◽  
Vol 1268 ◽  
Author(s):  
Mao-Hua Du
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
First Principles ◽  
Cell Performance ◽  
Thin Film Solar Cells ◽  
Back Contact ◽  
Cdte Thin Film ◽  
Solar Cell Performance ◽  
Cdte Solar Cells ◽  
P Type

AbstractForming a chemically stable low-resistance back contact for CdTe thin film solar cells is critically important to the cell performance. This paper reports theoretical study of the effects of the back contact material, Sb2Te3, on the performance of the CdTe solar cells. First-principles calculations show that Sb impurities in p-type CdTe are donors and can diffuse with low diffusion barrier. There properties are clearly detrimental to the solar cell performance. The Sb segregation into the grain boundaries may be required to explain the good efficiencies for the CdTe solar cells with Sb2Te3 back contacts.

Importance of electron current in p-type CdTe in CdS/CdTe thin film solar cells at forward bias

2001 ◽  
Vol 668 ◽  
Author(s):  
Jutta Beier ◽  
Marc Köntges ◽  
Peter Nollet ◽  
Stefaan Degrave ◽  
Marc Burgelman
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Minority Carrier ◽  
Voltage Dependence ◽  
Forward Bias ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Dependent Behavior ◽  
Measurement Results ◽  
P Type

ABSTRACTIn previous work [1,2], we modeled the cross-over of the I-V curves of thin film CdS/CdTe solar cells in terms of an electron (minority carrier) current in the vicinity of the back contact. In this work, we focus on the necessary extension of this analytical model based on a series of measurement results. Especially the wavelength and voltage dependence of the current at forward bias is illustrated in these measurements. The various possible causes for this kind of behavior are discussed and modeled. The extensions to the previous model, needed to describe the voltage and wavelength dependent behavior of I-V curves of real CdTe/CdS solar cells, are proposed.

scholarly journals TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

2021 ◽  
Author(s):  
Bablu K. Ghosh ◽  
Ismail Saad ◽  
Khairul A Mahmood
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Electrical Performance ◽  
Back Surface ◽  
Back Contact ◽  
Metal Contacts ◽  
Contact Barrier ◽  
Interface Layers

Abstract CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter and buffer layer selection with band gap matching to the active layer can lessen parasitic absorption loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.

Application of bromide-iodide lead perovskite thin film as a copper-free back contact layer for CdTe solar cells

Solar Energy ◽  
2021 ◽  
Vol 230 ◽  
pp. 832-842
Author(s):  
Biao Zhou ◽  
Fan Zhang ◽  
Junlin Zhang ◽  
Xiutao Yang ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Contact Layer ◽  
Back Contact ◽  
Cdte Solar Cells

MoOx as an Efficient and Stable Back Contact Buffer for Thin Film CdTe Solar Cells

2012 ◽  
Vol 1447 ◽  
Author(s):  
Hao Lin ◽  
Wei Xia ◽  
Hsiang N. Wu ◽  
Ching W. Tang ◽  
Irfan Irfan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Work Function ◽  
High Efficiency ◽  
Surface Cleaning ◽  
Back Contact ◽  
Metal Electrodes ◽  
Low Resistance ◽  
Cdte Solar Cells ◽  
Cell Stability

ABSTRACTA low-resistance back contact for n-CdS/p-CdTe solar cells has been developed, which utilizes a thermally evaporated MoOx thin film as the buffer layer between the p-CdTe and the back electrode. The low-resistance behavior of back contact is attributed to the high work function of MoOx, which reportedly is as high as 6.8 eV, and thus adequately matches that of p-CdTe. With MoOx as the buffer, a variety of common metals, even those with a low work function such as Al, have been found to be useful as the electrode in forming the back contact. Other advantages of the MoOx buffer include dry application by vacuum deposition, and thus it is particularly suitable for the fabrication of ultra-thin CdTe solar cells without introducing additional shorting defects. Surface cleaning of CdTe films prior to MoOx deposition has also been studied. The cell stability has been evaluated through thermal annealing tests. Thermal degradation has been explained in terms of oxidation of the metal electrodes. CdTe cells with high efficiency and good stability have been demonstrated with MoOx as the back contact buffer and Ni as the electrode.

Te/Cu bi-layer: A low-resistance back contact buffer for thin film CdS/CdTe solar cells

2014 ◽  
Vol 128 ◽  
pp. 411-420 ◽  
Author(s):  
Wei Xia ◽  
Hao Lin ◽  
Hsiang Ning Wu ◽  
Ching W. Tang ◽  
Irfan Irfan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Back Contact ◽  
Low Resistance ◽  
Cdte Solar Cells
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