Thin-film polycrystalline silicon solar cells on ceramic substrates by aluminium-induced crystallization

2005 ◽  
Vol 487 (1-2) ◽  
pp. 113-117 ◽  
Author(s):  
I. Gordon ◽  
D. Van Gestel ◽  
K. Van Nieuwenhuysen ◽  
L. Carnel ◽  
G. Beaucarne ◽  
...  
2006 ◽  
Vol 511-512 ◽  
pp. 21-25 ◽  
Author(s):  
L. Carnel ◽  
I. Gordon ◽  
D. Van Gestel ◽  
K. Van Nieuwenhuysen ◽  
G. Agostinelli ◽  
...  

2012 ◽  
Vol 21 (6) ◽  
pp. 1377-1383 ◽  
Author(s):  
Jonathon Dore ◽  
Rhett Evans ◽  
Ute Schubert ◽  
Bonne D. Eggleston ◽  
Daniel Ong ◽  
...  

2006 ◽  
Vol 910 ◽  
Author(s):  
Ivan Gordon ◽  
Dries Van Gestel ◽  
Lode Carnel ◽  
Kris Van Nieuwenhuysen ◽  
Guy Beaucarne ◽  
...  

AbstractA considerable cost reduction could be achieved in photovoltaics if efficient solar cells could be made from thin polycrystalline-silicon (pc-Si) layers. Aluminum-induced crystallization (AIC) of amorphous silicon followed by epitaxial thickening is an effective way to obtain large-grained pc-Si layers with excellent properties for solar cells. To obtain efficient solar cells, the electronic quality of the pc-Si material obtained by AIC has to be optimized and the cell design has to be adapted to the material. In this paper, we report on pc-Si solar cells made by AIC in combination with thermal CVD on ceramic alumina substrates. We made pc-Si solar cells on alumina substrates that showed Voc values up to 533 mV and efficiencies up to 5.9%. This is the highest efficiency ever achieved with pc-Si solar cells on ceramic substrates where no (re)melting of silicon was used. We demonstrate that the quality of the pc-Si material can be improved drastically by reducing the substrate roughness using spin-on oxides. We further show that a-Si/c-Si heterojunctions lead to much higher Voc values than diffused homojunctions. A cell concept that incorporates spin-on oxides and heterojunction emitters is therefore best suited to obtain efficient pc-Si solar cells on alumina substrates.


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