Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering

2005 ◽  
Vol 483 (1-2) ◽  
pp. 16-20 ◽  
Author(s):  
Q.X. Guo ◽  
M. Yoshitugu ◽  
T. Tanaka ◽  
M. Nishio ◽  
H. Ogawa
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Reactive Sputtering ◽  
Microscopic Investigations

scholarly journals Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

PLoS ONE ◽  
2015 ◽  
Vol 10 (7) ◽  
pp. e0133479 ◽  
Author(s):  
Khaled Sayed Elbadawi Ramadan ◽  
Stephane Evoy
Keyword(s):  
Low Temperature ◽  
Aluminum Nitride ◽  
Reactive Sputtering ◽  
Thin Aluminum

Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

2014 ◽  
Vol 105 (22) ◽  
pp. 221905 ◽  
Author(s):  
B. E. Belkerk ◽  
S. Bensalem ◽  
A. Soussou ◽  
M. Carette ◽  
H. Al Brithen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Low Temperature ◽  
Aluminum Nitride

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Interface Stabilization of W-N Coatings by Chromium Alloying

1991 ◽  
Vol 237 ◽  
Author(s):  
O. Knotek ◽  
F. Löftier ◽  
A. Barimani
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Vapour Deposition ◽  
Reactive Sputtering ◽  
Interface Layer ◽  
Stable Configuration ◽  
Tungsten Nitride ◽  
Physical Vapour Deposition ◽  
Metastable Structures ◽  
Equilibrium Phases

ABSTRACTNew metastable materials can be deposited using low temperature physical vapour deposition (PVD) techniques. During reactive sputtering, the atoms condensing in an intermixed state attempt to achieve a stable configuration. Due to low mobility of the adatoms, equilibrium phases cannot form and metastable structures are observed. Reactive sputtering can be used to deposit films with different stoichiometries and structures in the W-N system. The metastable phases α-W. β-W. W2N and WN1−x are obtained. All coatings are, however, thermally unstable. At temperatures above 570 °C. all phases are transformed into the a-W modification. By alloying chromium to the coatings in the W-N system, it is possible to stabilize all tungsten and tungsten nitride modifications as well as the interface layer between the substrate and the thin films.

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