Temperature calibration procedure for thin film substrates for thermo-ellipsometric analysis using melting point standards

2015 ◽  
Vol 601 ◽  
pp. 29-32 ◽  
Author(s):  
Emiel J. Kappert ◽  
Michiel J.T. Raaijmakers ◽  
Wojciech Ogieglo ◽  
Arian Nijmeijer ◽  
Cindy Huiskes ◽  
...  
Author(s):  
Martin Y. Zhang ◽  
Qiong Nian ◽  
Gary J. Cheng

In this study, a method combining room temperature pulsed laser deposition (PLD) and direct pulsed laser recrystallization (DPLR) are introduced to deposit superior transparent conductive oxide (TCO) layer on low melting point flexible substrates. As an indispensable component of thin film solar cell, TCO layer with a higher quality will improve the overall performance of solar cells. Alumina-doped zinc oxide (AZO), as one of the most promising TCO candidates, has now been widely used in solar cells. However, to achieve optimal electrical and optical properties of AZO on low melting point flexible substrate is challenging. Recently developed direct pulsed laser recrystallization (DPLR) technique is a scalable, economic and fast process for point defects elimination and recrystallization at room temperature. It features selective processing by only heating up the TCO thin film and preserve the underlying substrate at low temperature. In this study, 250 nm AZO thin film is pre-deposited by pulsed laser deposition (PLD) on flexible and rigid substrates. Then DPLR is introduced to achieve a uniform TCO layer on low melting point flexible substrates, i.e. commercialized Kapton polyimide film and micron-thick Al-foil. Both finite element analysis (FEA) simulation and designed experiments are carried out to demonstrate that DPLR is promising in manufacturing high quality AZO layers without any damage to the underlying flexible substrates. Under appropriate experiment conditions, such as 248 nm in laser wavelength, 25 ns in laser pulse duration, 15 laser pulses at laser fluence of 25 mJ/cm2, desired temperature would result in the AZO thin film and activate the grain growth and recrystallization. Besides laser conditions, the thermal conductivity and crystallinity of the substrate serve as additional factors in the DPLR process. It is found that the substrate’s thermal conductivity correlates positively with the AZO crystal size; the substrate’s crystallinity correlates positively with the AZO film’s crystallinity. The thermal expansion of substrate would also contribute to the film tensile stress after processed by DPLR technique. The overall results indicate that DPLR technique is useful and scalable for flexible solar cell manufacturing.


2015 ◽  
Vol 8 (2) ◽  
pp. 779-792 ◽  
Author(s):  
P. Panteliadis ◽  
T. Hafkenscheid ◽  
B. Cary ◽  
E. Diapouli ◽  
A. Fischer ◽  
...  

Abstract. A comparison exercise on thermal-optical elemental carbon/organic carbon (ECOC) analysers was carried out among 17 European laboratories. Contrary to previous comparison exercises, the 17 participants made use of an identical instrument set-up, after correcting for temperature offsets with the application of a recently developed temperature calibration kit (Sunset Laboratory Inc, OR, US). Temperature offsets reported by participants ranged from −93 to +100 °C per temperature step. Five filter samples and two sucrose solutions were analysed with both the EUSAAR2 and NIOSH870 thermal protocols. z scores were calculated for total carbon (TC); nine outliers and three stragglers were identified. Three outliers and eight stragglers were found for EC. Overall, the participants provided results between the warning levels with the exception of two laboratories that showed poor performance, the causes of which were identified and corrected through the course of the comparison exercise. The TC repeatability and reproducibility (expressed as relative standard deviations) were 11 and 15% for EUSAAR2 and 9.2 and 12% for NIOSH870; the standard deviations for EC were 15 and 20% for EUSAAR2 and 20 and 26% for NIOSH870. TC was in good agreement between the two protocols, TCNIOSH870 = 0.98 × TCEUSAAR2 (R2 = 1.00, robust means). Transmittance (TOT) calculated EC for NIOSH870 was found to be 20% lower than for EUSAAR2, ECNIOSH870 = 0.80 × ECEUSAAR2 (R2 = 0.96, robust means). The thermograms and laser signal values were compared and similar peak patterns were observed per sample and protocol for most participants. Notable deviations from the typical patterns indicated either the absence or inaccurate application of the temperature calibration procedure and/or pre-oxidation during the inert phase of the analysis. Low or zero pyrolytic organic carbon (POC), as reported by a few participants, is suggested as an indicator of an instrument-specific pre-oxidation. A sample-specific pre-oxidation effect was observed for filter G, for all participants and both thermal protocols, indicating the presence of oxygen donors on the suspended particulate matter. POC (TOT) levels were lower for NIOSH870 than for EUSAAR2, which is related to the heating profile differences of the two thermal protocols.


1983 ◽  
Vol 67 (2-3) ◽  
pp. 241-250 ◽  
Author(s):  
A.R. McGhie ◽  
J. Chiu ◽  
P.G. Fair ◽  
R.L. Blaine

2009 ◽  
Vol 43 (10) ◽  
pp. 1013-1021 ◽  
Author(s):  
Chin H. Phuah ◽  
Max R. Peterson ◽  
Melville H. Richards ◽  
Jay H. Turner ◽  
Ann M. Dillner

2011 ◽  
Vol 14 (3) ◽  
pp. 179-188
Author(s):  
Eiji Sakamoto ◽  
Shohei Hata ◽  
Hisashi Aoki ◽  
Hideaki Takemori ◽  
Kazuhiro Hirose
Keyword(s):  

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 314 ◽  
Author(s):  
Qifu Wang ◽  
Meng Gao ◽  
Lunjia Zhang ◽  
Zhongshan Deng ◽  
Lin Gui

A handy, flexible micro-thermocouple using low-melting-point metal alloys is proposed in this paper. The thermocouple has the advantages of simple fabrication and convenient integration. Bismuth/gallium-based mixed alloys are used as thermocouple materials. To precisely inject the metal alloys to the location of the sensing area, a micro-polydimethylsiloxane post is designed within the sensing area to prevent outflow of the metal alloy to another thermocouple pole during the metal-alloy injection. Experimental results showed that the Seebeck coefficient of this thermocouple reached −10.54 μV/K, which was much higher than the previously reported 0.1 μV/K. The thermocouple was also be bent at 90° more than 200 times without any damage when the mass ratio of the bismuth-based alloy was <60% in the metal-alloy mixture. This technology mitigated the difficulty of depositing traditional thin–film thermocouples on soft substrates. Therefore, the thermocouple demonstrated its potential for use in microfluidic chips, which are usually flexible devices.


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