Penetration of ammonia molecule into ice film; activation energy analysis using Xe molecular beam irradiation

2007 ◽  
Vol 601 (4) ◽  
pp. 1072-1078 ◽  
Author(s):  
M. Inamura ◽  
T. Takaoka ◽  
T. Komeda
Keyword(s):  
Activation Energy ◽  
Molecular Beam ◽  
Energy Analysis ◽  
Ammonia Molecule ◽  
Beam Irradiation

Molecular-beam study of the activation energy requirements for the dioxetane reaction

1978 ◽  
Vol 100 (11) ◽  
pp. 3274-3278 ◽  
Author(s):  
K. T. Alben ◽  
A. Auerbach ◽  
W. M. Ollison ◽  
J. Weiner ◽  
R. J. Cross
Keyword(s):  
Activation Energy ◽  
Molecular Beam ◽  
Energy Requirements

scholarly journals Cellulose Nanocrystals (CNCs) from Corn Stalk: Activation Energy Analysis

Materials ◽  
2017 ◽  
Vol 10 (1) ◽  
pp. 80 ◽  
Author(s):  
Siwei Huang ◽  
Ling Zhou ◽  
Mei-Chun Li ◽  
Qinglin Wu ◽  
Dingguo Zhou
Keyword(s):  
Activation Energy ◽  
Cellulose Nanocrystals ◽  
Energy Analysis ◽  
Corn Stalk

Elevated Temperature Characteristics of Carbon-Doped GaInP/GaAs Heterojunction Bipolar Transistor Grown by Solid Source Molecular Beam Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
Zhang Rong ◽  
Yoon Soon Fatt ◽  
Tan Kianhua ◽  
Sun Zhongzhe ◽  
Huang Qingfeng
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Base Material ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Collector Current ◽  
Carbon Doped ◽  
Base Current ◽  
Recombination Current

ABSTRACTThis paper reports the characteristics of GaInP/GaAs heterojunction bipolar transistor (HBT) with carbon-doped GaAs base layer grown by solid source molecular beam epitaxy (SSMBE) using carbon tetrabromide (CBr4) as p-type dopant precursor. Hydrofluoric acid (HF) was used to passivate the GaInP/GaAs HBTs. At base bias voltages below 0.8V in the Gummel plot, the base current of large-area devices after HF treatment was greatly reduced. This indicates that the extrinsic base surface recombination current was greatly reduced. After HF treatment, detailed DC characterization of the device performance from 300K to 380K was carried out and the carrier transport properties were investigated. The base current and collector current ideality factors at 300K were 1.12 and 1.01, respectively. This indicates that the space- charge region recombination current in the base is insignificant. From the temperature- dependent Gummel plot, the activation energies of collector current and base current were obtained. For the collector current, the activation energy is 1.4eV, which is close to the bandgap of the GaAs base. This indicates that the collector current is determined by the drift-diffusion process, in which an energy barrier of the same magnitude as the base bandgap is to be overcome by electrons before they reach the collector. For the base current, the activation energy is also 1.4eV, which is close to the bandgap of GaAs, indicating that band-to-band recombination plays a dominant role in the base current. No trap-related recombination was observed for the base and collector currents, which further indicates the high quality carbon-doped GaAs base material for the HBT structures.

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