Ordered growth of germanium dots induced by the strain field of tilt dislocations in molecular bonded silicon (001) thin films

2006 ◽  
Vol 600 (11) ◽  
pp. L135-L138 ◽  
Author(s):  
V. Poydenot ◽  
R. Dujardin ◽  
J.L. Rouvière ◽  
A. Barski ◽  
J. Mezière ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Field

INTERFACE AND STEP LOCALIZED PHONON MODES BETWEEN TWO TRUNCATED THIN FILMS

2004 ◽  
Vol 11 (02) ◽  
pp. 155-165
Author(s):  
M. TAMINE ◽  
H. BOUMRAR ◽  
O. RAFIL
Keyword(s):  
Thin Films ◽  
Strain Field ◽  
Phonon Dispersion ◽  
Harmonic Approximation ◽  
Elastic Force ◽  
Force Constants ◽  
Step Edge ◽  
Dimensional Structure ◽  
Phonon Modes ◽  
Low Dimensional

We have carried out the calculations of vibrational dynamics in the low-dimensional structure with dimensions on the nanometer scale by using the matching formalism. The nanostructure model consists in the surface step produced at a perpendicular interface between two truncated thin films with different thickness. The theoretical approach determines the vibrational field in the direction where the translation symmetry is broken. The calculation concerns in particular the phonon dispersion curves localized on the interface and step edge, and employs the matching procedure in the harmonic approximation. The nearest and next nearest neighbors elastic force constants between the mass sites in the model, as well as a modification of the elastic strain field induced by the presence of the step, are considered. Analytic expressions are obtained for the phonon dispersion relations of the localized surface and edge elastic waves and the bulk phonons near a step. The breakdown of translational symmetry perpendicular to the step edge gives rise to several Raleigh-like branches localized in the neighborhood of step and interface. The effects of varying the elastic force constants at an interface and the strain field parameter near the step are studied. These factors influence the number of localized modes as well as their frequency, intensity and attenuation.

Microscale Laser Shock Peening of Thin Films, Part 2: High Spatial Resolution Material Characterization

2004 ◽  
Vol 126 (1) ◽  
pp. 18-24 ◽  
Author(s):  
Wenwu Zhang ◽  
Y. Lawrence Yao ◽  
I. C. Noyan
Keyword(s):  
Thin Films ◽  
Spatial Resolution ◽  
Strain Field ◽  
High Spatial Resolution ◽  
Laser Shock Peening ◽  
Laser Shock ◽  
Stress Strain ◽  
Crystal Silicon ◽  
X Ray ◽  
Shock Peening

Microscale Laser Shock Peening (LSP) is a technique that can be potentially applied to manipulate the residual stress distributions in metal film structures and thus improve the reliability of micro-devices. This paper reports high-spatial-resolution characterization of shock treated copper thin films on single-crystal silicon substrates, where scanning x-ray microtopography is used to map the relative variation of the stress/strain field with micron spatial resolution, and instrumented nanoindentation is applied to measure the distribution of hardness and deduce the sign of the stress/strain field. The measurement results are also compared with 3-D simulation results. The general trends in simulations agree with those from experimental measurements. Simulations and experiments show that there is a near linear correlation between strain energy density at the film-substrate interface and the X-ray diffraction intensity contrast.

Quantitative analysis of strain field in thin films from HRTEM micrographs

1998 ◽  
Vol 319 (1-2) ◽  
pp. 157-162 ◽  
Author(s):  
E Snoeck ◽  
B Warot ◽  
H Ardhuin ◽  
A Rocher ◽  
M.J Casanove ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantitative Analysis ◽  
Strain Field ◽  
Hrtem Micrographs

Atomic structure and strain field of threading dislocations in CeO2 thin films on yttria-stabilized ZrO2

2011 ◽  
Vol 98 (15) ◽  
pp. 153104 ◽  
Author(s):  
Hajime Hojo ◽  
Eita Tochigi ◽  
Teruyasu Mizoguchi ◽  
Hiromichi Ohta ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Structure ◽  
Strain Field ◽  
Threading Dislocations

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

A standard for transmission electron spectroscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 530-531 ◽  
Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Host Lattice ◽  
Single Element ◽  
Multicomponent Systems ◽  
Transmission Electron ◽  
Major Interest ◽  
Standard Specimens ◽  
Forms Of Carbon ◽  
Electron Energy Loss

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).

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