Steady state self-heating and dc current–voltage characteristics of high-voltage 4H-SiC p+–n–n+ rectifier diodes

2007 ◽  
Vol 51 (6) ◽  
pp. 955-960 ◽  
Author(s):  
Michael E. Levinshtein ◽  
Tigran T. Mnatsakanov ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Steady State ◽  
High Voltage ◽  
Self Heating ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Dc Current

Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

2016 ◽  
Vol 50 (5) ◽  
pp. 656-661
Author(s):  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
Q. J. Zhang ◽  
J. W. Palmour
Keyword(s):  
High Voltage ◽  
Schottky Rectifiers ◽  
Current Voltage ◽  
Current Voltage Characteristics

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

2000 ◽  
Vol 338-342 ◽  
pp. 1319-1322
Author(s):  
N.V. Dyakonova ◽  
Pavel A. Ivanov ◽  
V.A. Kozlov ◽  
Michael E. Levinshtein ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

LEFT-HANDED MAXWELLIAN BEHAVIOR OF NATURAL MICA

2011 ◽  
Vol 25 (30) ◽  
pp. 2323-2333
Author(s):  
ADITI SARKAR ◽  
ARNAB GANGOPADHYAY ◽  
A. SARKAR
Keyword(s):  
Monochromatic Light ◽  
Polarized Light ◽  
X Ray Diffraction ◽  
Optical Reflectance ◽  
Optical Absorbance ◽  
Left Handed ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Dc Current ◽  
Theoretical Results

In this work, meta-material like behavior of natural Mica are studied. This work makes an attempt to analyze the left-handed Maxwellian (LHM) properties of Mica. The investigations carried out on natural Mica specimen are optical reflectance, optical absorbance and DC current–voltage-characteristics (CVC). Optical reflectance of Mica sheet with plane polarized monochromatic light shows distinct difference with conventional theoretical results. The DC CVC also measured with complete electromagnetic shielding. There exists a clear difference in DC characteristic for presence and absence of stray electromagnetic fields. The X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectroscopy (UV-VIS) analysis are also carried out for further analysis. The results obtained from the optical reflectance characteristics using polarized light indicate LHM behavior as may be found in a meta-material. Micro-structural and electrical analysis shows that it is a nano-structured layered material.

Characterization of Gd2O3 Nano Clusters

2013 ◽  
Vol 665 ◽  
pp. 127-131
Author(s):  
Somnath Paul ◽  
Arnab Gangopadhyay ◽  
A. Sarkar
Keyword(s):  
Thermal Dissociation ◽  
Gadolinium Oxide ◽  
Magnetic Element ◽  
Optical Absorbance ◽  
Current Voltage ◽  
Sensitivity Studies ◽  
Current Voltage Characteristics ◽  
Dc Current ◽  
Average Cluster

Gadolinium (Gd) is a weak magnetic element at room temperature. Gadolinium oxide (Gd2O3) is a poor semiconductor with para-magnetism. In this work Gadolinium oxide is prepared from the thermal dissociation of Gadolinium acetate. The average cluster size is found to be dependent on the number of the sintering time. In this present work an attempt has been made to characterize the developed Gadolinium oxide. Experimental probes used to characterize it are optical absorbance (UV-VIS); Fourier transformed infra red (FTIR) spectroscopy, DC current voltage characteristics (CVC) and photo-sensitivity studies of the developed specimens. Gadolinium oxide exhibits a good optical sensing property.

scholarly journals Efficiency and Droop Improvement in GaN-Based High-Voltage Flip Chip LEDs

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Yen-Chih Chiang ◽  
Bing-Cheng Lin ◽  
Kuo-Ju Chen ◽  
Sheng-Huan Chiu ◽  
Chien-Chung Lin ◽  
...  
Keyword(s):  
High Voltage ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Light Extraction ◽  
Efficiency Enhancement ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

1999 ◽  
Vol 46 (11) ◽  
pp. 2188-2194 ◽  
Author(s):  
N.V. Dyakonova ◽  
P.A. Ivanov ◽  
V.A. Kozlov ◽  
M.E. Levinshtein ◽  
J.W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics
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