High pressure RHEED study on the initial structure and growth dynamics of Y Ba2Cu3O7−δ thin films on SrTiO3 (001)

2012 ◽  
Vol 152 (6) ◽  
pp. 478-482 ◽  
Author(s):  
J. Li ◽  
W. Peng ◽  
Ke Chen ◽  
Y. Zhang ◽  
L.M. Cui ◽  
...  
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Growth Dynamics ◽  
Initial Structure

scholarly journals High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Rare Earth ◽  
Ionic Conductivity ◽  
Bulk Material ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H2O Vapor

1998 ◽  
Vol 37 (Part 1, No. 8) ◽  
pp. 4254-4257 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Mitsuru Satoh ◽  
Keiji Sakamoto ◽  
Kentaro Ozaki ◽  
Keiko Saitoh
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
High Pressure ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

High-pressure water vapor treatment for poly-crystalline germanium thin films

2012 ◽  
Vol 358 (17) ◽  
pp. 2107-2109 ◽  
Author(s):  
Takeru Sagisaka ◽  
Takahiro Takatsu ◽  
Masao Isomura
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Water Vapor ◽  
Pressure Water ◽  
Vapor Treatment ◽  
Crystalline Germanium

Network behavior in thin films and nanostructure growth dynamics

2011 ◽  
pp. 384-403
Author(s):  
H. Guclu ◽  
T. Karabacak ◽  
M. Yuksel
Keyword(s):  
Thin Films ◽  
Growth Dynamics ◽  
Network Behavior

MEASUREMENT OF CRITICAL EXPONENTS OF NANOSTRUCTURED GOLD THIN FILMS

2003 ◽  
Vol 10 (06) ◽  
pp. 903-908 ◽  
Author(s):  
L. L. MELO ◽  
M. C. SALVADORI ◽  
M. CATTANI
Keyword(s):  
Thin Films ◽  
Critical Exponents ◽  
Growth Dynamics ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscopy ◽  
Grain Sizes ◽  
Metal Plasma ◽  
Nanostructured Gold ◽  
Gold Thin Films

We have fabricated gold thin films by metal plasma ion deposition on silicon substrates. The roughness of these nanostructured films has been measured by scanning tunneling microscopy (STM) and we have determined the growth dynamics critical exponents. We have also measured the grain sizes as a function of the film thickness.

scholarly journals Critical current densities of high pressure oxygen sputtered thin films of YBa2Cu3O7−x by non-resonant rf absorption method

Pramana ◽  
1993 ◽  
Vol 40 (2) ◽  
pp. 119-122 ◽  
Author(s):  
V V Srinivasu ◽  
S V Bhat ◽  
G K Muralidhar ◽  
G Mohan Rao ◽  
S Mohan
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Critical Current ◽  
Absorption Method ◽  
Pressure Oxygen ◽  
High Pressure Oxygen ◽  
Current Densities
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