Three-magnon process in the one-dimensional integer spin antiferromagnetic Heisenberg chain

2008 ◽  
Vol 148 (11-12) ◽  
pp. 541-544 ◽  
Author(s):  
L.S. Lima ◽  
A.S.T. Pires
Keyword(s):  
Heisenberg Chain ◽  
One Dimensional ◽  
Integer Spin ◽  
The One

scholarly journals Scaling limit of the one-dimensional XXZ Heisenberg chain with easy axis anisotropy

1999 ◽  
Vol 562 (3) ◽  
pp. 497-523 ◽  
Author(s):  
Tamás Hauer ◽  
Attila Rákos ◽  
Ferenc Woynarovich
Keyword(s):  
Easy Axis ◽  
Scaling Limit ◽  
Heisenberg Chain ◽  
One Dimensional ◽  
The One

scholarly journals Effective Hamiltonian for a half-filled asymmetric ionic Hubbard chain with alternating on-site interaction

2016 ◽  
Vol 30 (03) ◽  
pp. 1550260 ◽  
Author(s):  
I. Grusha ◽  
M. Menteshashvili ◽  
G. I. Japaridze
Keyword(s):  
Magnetic Field ◽  
Nearest Neighbor ◽  
Effective Hamiltonian ◽  
Heisenberg Chain ◽  
Spin Hamiltonian ◽  
Effective Spin ◽  
One Dimensional ◽  
The One ◽  
Strong Repulsion ◽  
Ionic Hubbard Model

We derive an effective spin Hamiltonian for the one-dimensional half-filled asymmetric ionic Hubbard model (IHM) with alternating on-site interaction in the limit of strong repulsion. It is shown that the effective Hamiltonian is that of a spin S = 1/2 anisotropic XXZ Heisenberg chain with alternating next-nearest-neighbor (NNN) and three-spin couplings in the presence of a uniform and a staggered magnetic field.

ESR Study of Electrochemically Doped Chalcogenide Nanotubes

2003 ◽  
Vol 775 ◽  
Author(s):  
Denis Arcon ◽  
Andrej Zorko ◽  
Pavel Cevc ◽  
Ales Mrzel ◽  
Maja Remskar ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electrochemical Activity ◽  
Chain Model ◽  
Heisenberg Chain ◽  
One Dimensional ◽  
Narrow Component ◽  
Broad Component ◽  
X Band ◽  
Heavily Doped ◽  
The One

AbstractElectrochemical activity of differently pretreated single-wall subnanometer-diameter molybdenum disulfide tubes (nMoS2) was tested and compared with layered MoS2 material. In as prepared and de-iodized nMoS2 samples a significant increase in the charge capacity has been found compared to the one measured in dispersed nMoS2 or layered MoS2. Enhanced electrochemical activity has been attributed to a particular one-dimensional topology of nanotubes bundles. Electrochemically doped samples were then studied with X-band ESR. While undoped nMoS2 show no X-band ESR signal between room temperature and 4 K we found in heavily doped nMoS2 samples two distinct ESR components: a narrow component with a linewidth of few Guass and a broad component with a linewidth of more than 800 G. The broad ESR component is characteristic of Mo d-orbital-derived band. The temperature dependence of the ESR spin susceptibility and the linewidth of the broad ESR component can be discussed either in terms of conducting electrons coupled to defects or in terms of random-exchange Mo Heisenberg chain model.

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