Optical properties of nickel(II)–azo complexes thin films for potential application as high-density recordable optical recording media

2007 ◽  
Vol 141 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Zhimin Chen ◽  
Yiqun Wu ◽  
Fuxin Huang ◽  
Donghong Gu ◽  
Fuxi Gan
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Potential Application ◽  
Optical Recording ◽  
High Density ◽  
Recording Media

Optical Properties of Multi-layer Chalcogenide Thin Film for Optical Recording Media

2003 ◽  
Vol 803 ◽  
Author(s):  
Myung-Jin Kang ◽  
Chan-Gyung Park ◽  
Se-Young Choi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Data Storage ◽  
Optical Band Gap ◽  
Optical Recording ◽  
Recording Media ◽  
Optical Contrast ◽  
The Media ◽  
Chalcogenide Thin Film

ABSTRACTWe present the results of optical properties of multi layer thin films as in the media of phase change optical disk data storage. Reflectance and optical contrast of multi layer thin films increased rapidly between 100 °C and 150 °C. Moreover, optical contrasts at different wavelength were also studied. The refractive index and the optical band gap decreased, while the extinction coefficient increases as the crystallization occurs. The Egopt of crystalline thin film was ∼0.6 eV lower than that of amorphous thin film. Egopt decreased as the number of stacked layer increased.

Spectral, thermal and optical properties of metal(ІІ)–azo complexes for optical recording media

2010 ◽  
Vol 86 (2) ◽  
pp. 182-189 ◽  
Author(s):  
Xiaoyi Li ◽  
Yiqun Wu ◽  
Donghong Gu ◽  
Fuxi Gan
Keyword(s):  
Optical Properties ◽  
Optical Recording ◽  
Recording Media

scholarly journals Copper nitride and tin nitride thin films for write‐once optical recording media

1996 ◽  
Vol 69 (7) ◽  
pp. 890-891 ◽  
Author(s):  
Toshiro Maruyama ◽  
Tomonori Morishita
Keyword(s):  
Thin Films ◽  
Optical Recording ◽  
Recording Media ◽  
Copper Nitride ◽  
Tin Nitride

The Study of Nickel on Copper Nitride Thin Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 636 ◽  
pp. 29-32
Author(s):  
Xing Ao Li ◽  
Rong Yang ◽  
Wen Jie Liu ◽  
Jia Han ◽  
Jian Bo Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Decomposition ◽  
Magnetron Sputtering ◽  
Optical Recording ◽  
Diffraction Peak ◽  
Recording Media ◽  
Copper Nitride ◽  
Before And After

Ni-doped copper nitride films have been prepared by co-sputtering of Ni and Cu targets. The addition of Ni to Cu3N films reduced the intensity of the (111) diffraction peak, and lead a little angular shifts of the peaks. The films showed a large difference in reflectance in the infrared and visible before and after thermal decomposition, which is applicable to optical recording media. The films change from a semiconductor to a conductor with the increased ratio of Ni in Cu3N films.

scholarly journals Growth of Atomic Layer Deposited Ruthenium and Its Optical Properties at Short Wavelengths Using Ru(EtCp)2 and Oxygen

Coatings ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 413 ◽  
Author(s):  
Robert Müller ◽  
Lilit Ghazaryan ◽  
Paul Schenk ◽  
Sabrina Wolleb ◽  
Vivek Beladiya ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Deposition Temperature ◽  
Film Growth ◽  
High Surface ◽  
Atomic Layer ◽  
Fused Silica ◽  
High Density ◽  
Adhesion Properties

High-density ruthenium (Ru) thin films were deposited using Ru(EtCp)2 (bis(ethylcyclopentadienyl)ruthenium) and oxygen by thermal atomic layer deposition (ALD) and compared to magnetron sputtered (MS) Ru coatings. The ALD Ru film growth and surface roughness show a significant temperature dependence. At temperatures below 200 °C, no deposition was observed on silicon and fused silica substrates. With increasing deposition temperature, the nucleation of Ru starts and leads eventually to fully closed, polycrystalline coatings. The formation of blisters starts at temperatures above 275 °C because of poor adhesion properties, which results in a high surface roughness. The optimum deposition temperature is 250 °C in our tool and leads to rather smooth film surfaces, with roughness values of approximately 3 nm. The ALD Ru thin films have similar morphology compared with MS coatings, e.g., hexagonal polycrystalline structure and high density. Discrepancies of the optical properties can be explained by the higher roughness of ALD films compared to MS coatings. To use ALD Ru for optical applications at short wavelengths (λ = 2–50 nm), further improvement of their film quality is required.

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