Effect of growth rate on the structure and physical properties of Mo doped ZnO films

2016 ◽  
Vol 99 ◽  
pp. 175-181 ◽  
Author(s):  
Guifeng Chen ◽  
Xiaoli Zhao ◽  
Hui Zhang ◽  
Feifei Liu ◽  
Yong Wang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Physical Properties ◽  
Zno Films ◽  
Doped Zno

scholarly journals Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates

2018 ◽  
Vol 21 (6) ◽  
Author(s):  
Hector Eduardo Silva-Lopez ◽  
Becerril Silva Marcelino ◽  
Angel Guillen-Cervantes ◽  
Orlando Zelaya-Angel ◽  
Rafael Ramirez-Bon
Keyword(s):  
Physical Properties ◽  
Zno Films ◽  
Doped Zno

Structure and physical properties of hydrogenated (Co + Al)-doped ZnO films: Comparative study with co-doped ZnO films

2021 ◽  
Vol 264 ◽  
pp. 114943 ◽  
Author(s):  
Yulia E. Samoshkina ◽  
Irina S. Edelman ◽  
Hsiung Chou ◽  
Hsien-Chi Lin ◽  
Gopeshwar D. Dwivedi ◽  
...  
Keyword(s):  
Comparative Study ◽  
Physical Properties ◽  
Zno Films ◽  
Doped Zno ◽  
Co Doped

Optimization of physical properties of transparent conductive F and Ga co-doped ZnO films for optoelectronic applications

2020 ◽  
Vol 269 ◽  
pp. 127591
Author(s):  
Yanfeng Wang ◽  
Jianmin Song ◽  
Yajuan Guo ◽  
Xiaochen Duan ◽  
Zelong Li ◽  
...  
Keyword(s):  
Physical Properties ◽  
Zno Films ◽  
Doped Zno ◽  
Optoelectronic Applications ◽  
Co Doped

Structural and physical properties of Ni and Al co-doped ZnO films grown on glass by direct current magnetron co-sputtering

2009 ◽  
Vol 404 (12-13) ◽  
pp. 1829-1834 ◽  
Author(s):  
Mingpeng Yu ◽  
Hong Qiu ◽  
Xiaobai Chen ◽  
Hongxi Liu ◽  
Mingwen Wang
Keyword(s):  
Physical Properties ◽  
Direct Current ◽  
Zno Films ◽  
Doped Zno ◽  
Co Doped

Crystal Polarity and Electrical Properties of Heavily Doped ZnO Films

2012 ◽  
Vol 1494 ◽  
pp. 133-138 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Isao Sakaguchi ◽  
Hajime Haneda
Keyword(s):  
Growth Rate ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Zno Film ◽  
Al Content ◽  
Heavily Doped ◽  
Doped Zno

ABSTRACTIn this study, ZnO f ilms heavily doped with Al or Ga were grown on a polarity-controlled buffer layer using pulsed laser deposition. The films prepared using a 1 mol% Al-doped target with the buffer layer grown at 700 °C had the c(+)-face, whereas the films with the buffer layer grown at 400 °C had the c(-)-face, which means that the polarity control can be successfully carried out using the buffer layer. However, the films prepared using targets doped with more than 1 mol% Al or Ga had the c(+)-face regardless of the polarity of the buffer layer. The 1 mol% Al-doped ZnO film with the c(+)-face had lower electron concentration and higher growth rate than the film with the c(-)-face. This result indicates that the Al content in the film with the c(-)-face was larger than that in the film with the c(+)-face.

Atomic Layer Deposition of Undoped and Al-Doped ZnO Thin Films Usingthe Zn Alkoxide Precursor Methylzinc Isopropoxide

2008 ◽  
Vol 8 (9) ◽  
pp. 4856-4859 ◽  
Author(s):  
Ki-Seok An ◽  
Wontae Cho ◽  
Byung Kook Lee ◽  
Sun Sook Lee ◽  
Chang Gyoun Kim
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Substrate Temperature ◽  
Deep Level ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno

Undoped and Al-doped ZnO thin films have been prepared by atomic layer deposition (ALD) using the Zn precursor methylzinc isopropoxide [MZI, (CH3)Zn(OCH(CH3)2)] with water (H2O). Dimethylaluminum isopropoxide (DMAI) was used as an Al precursor. The self-limiting ALD process via alternate surface reactions of MZI and H2O was confirmed by thickness measurements of the ZnO films with varying MZI supply time and numbers of MZI-H2O ALD cycles. Under optimal reaction conditions, the growth rate of the ZnO films was 1.9∼2.0 Å/cycle in the substrate temperature range of 160∼200 °C and the maximum growth rate reached about 2.58 Å/cycle at 240 °C. Room temperature photoluminescence (PL) measurements revealed a strong free excitonic peak at 3.27 eV with almost negligible deep level emission. Resistivities of ZnO films were measured to be 5 × 10−3 ∼3.2 × 10−3 Ωcm depending on the substrate temperature. By Al-doping, the resistivity was minimized to ∼1 35 × 10−4 Ωcm.

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