Room temperature Ge and ZnO embedded inside porous silicon using conventional methods for photonic application

2012 ◽  
Vol 52 (5) ◽  
pp. 941-948 ◽  
Author(s):  
A.F. Abd Rahim ◽  
M.R. Hashim ◽  
M. Rusop ◽  
N.K. Ali ◽  
R. Yusuf
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Conventional Methods

scholarly journals Scaling Up the Production of Electrodeposited Nanowires: A Roadmap towards Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1657
Author(s):  
Claudia Fernández-González ◽  
Jesús C. Guzmán-Mínguez ◽  
Alejandra Guedeja-Marrón ◽  
Eduardo García-Martín ◽  
Michael Foerster ◽  
...  
Keyword(s):  
Electrochemical Synthesis ◽  
Room Temperature ◽  
Scaling Up ◽  
Magnetic Configuration ◽  
Metallic Nanowires ◽  
Production Time ◽  
Novel Synthesis ◽  
Conventional Methods

The use of metallic nanowires is mostly reduced to scientific areas where a small quantity of nanostructures are needed. In order to broaden the applicability of these nanomaterials, it is necessary to establish novel synthesis protocols that provide a larger amount of nanowires than the conventional laboratory fabrication processes at a more competitive cost. In this work, we propose several modifications to the conventional electrochemical synthesis of nanowires in order to increase the production with considerably reduced production time and cost. To that end, we use a soft anodization procedure of recycled aluminum at room temperature to produce the alumina templates, followed by galvanostatic growth of CoFe nanowires. We studied their morphology, composition and magnetic configuration, and found that their properties are very similar to those obtained by conventional methods.

Room-temperature electroluminescence from erbium-doped porous silicon

1999 ◽  
Vol 75 (25) ◽  
pp. 3989-3991 ◽  
Author(s):  
Herman A. Lopez ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Erbium Doped

Room‐temperature backbond oxidation of the porous silicon surface by oxygen radical irradiation

1995 ◽  
Vol 66 (7) ◽  
pp. 836-838 ◽  
Author(s):  
Patrick O’Keeffe ◽  
Yoshinobu Aoyagi ◽  
Shuji Komuro ◽  
Takashi Kato ◽  
Takitaro Morikawa
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Room Temperature ◽  
Oxygen Radical ◽  
Porous Silicon Surface

Effect of current density on the porous silicon preparation as gas sensors**

2021 ◽  
Vol 30 (1) ◽  
pp. 257-264
Author(s):  
Muna H. Kareem ◽  
Adi M. Abdul Hussein ◽  
Haitham Talib Hussein
Keyword(s):  
Porous Silicon ◽  
Gas Sensors ◽  
Current Density ◽  
Room Temperature ◽  
Low Cost ◽  
High Surface ◽  
Volume Ratio ◽  
Etching Time ◽  
Force Microscopy ◽  
Materials Used

Abstract In this study, porous silicon (PSi) was used to manufacture gas sensors for acetone and ethanol. Samples of PSi were successfully prepared by photoelectrochemical etching and applied as an acetone and ethanol gas sensor at room temperature at various current densities J= 12, 24 and 30 mA/cm2 with an etching time of 10 min and hydrofluoric acid concentration of 40%. Well-ordered n-type PSi (100) was carefully studied for its chemical composition, surface structure and bond configuration of the surface via X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy and photoluminescence tests. Results showed that the best sensitivity of PSi was to acetone gas than to ethanol under the same conditions at an etching current density of 30 mA/cm2, reaching about 2.413 at a concentration of 500 parts per million. The PSi layers served as low-cost and high-quality acetone gas sensors. Thus, PSi can be used to replace expensive materials used in gas sensors that function at low temperatures, including room temperature. The material has an exceptionally high surface-to-volume ratio (increasing surface area) and demonstrates ease of fabrication and compatibility with manufacturing processes of silicon microelectronics.

Observation of room-temperature resonant photoluminescence in porous silicon

2006 ◽  
Vol 35 (1) ◽  
pp. 151-156 ◽  
Author(s):  
A Kanjilal ◽  
M Song ◽  
K Furuya ◽  
B Mallik
Keyword(s):  
Porous Silicon ◽  
Room Temperature

Fabrication of Macroporous Silicon in Organic Electrolytes and their Luminescence

2017 ◽  
Vol 748 ◽  
pp. 127-131 ◽  
Author(s):  
Wu Lin Li ◽  
Wen Jing Yang ◽  
Mei Long ◽  
Gen Rong Li ◽  
Yan Ma ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Electrochemical Process ◽  
Macroporous Silicon ◽  
Organic Solution ◽  
Organic Electrolytes ◽  
Red Luminescence ◽  
Organic Solutions ◽  
Side Illumination ◽  
Nanoporous Layer

The quasi-regular arrangements porous silicon was fabricated by by electrochemical process using organic solutions with front-side illumination, and SEM showed that the morphology of porous silicon was dependent sensitively on the current density, organic electrolytes and their concentration. The results indicate that N-dimethylformamide (DMF) is the best organic solution and quasi-regular arranged pores can be well organized in 20%HF/DMF solution. The luminescence shows fresh porous silicon can emit the red luminescence at room temperature and quench after nanoporous layer destroyed.

Effect of Au on the Performance of Porous Silicon/V2O5 Nanorods Heterojunctions to NO2 Gas

NANO ◽  
2016 ◽  
Vol 11 (07) ◽  
pp. 1650079 ◽  
Author(s):  
Wenjun Yan ◽  
Ming Hu ◽  
Jiran Liang ◽  
Dengfeng Wang ◽  
Yulong Wei ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Porous Silicon ◽  
Room Temperature ◽  
Au Nanoparticles ◽  
Analytical Techniques ◽  
Heating Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

A novel composite of Au-functionalized porous silicon (PS)/V2O5 nanorods (PS/V2O5:Au) was prepared to detect NO2 gas. PS/V2O5 nanorods were synthesized by a heating process of pure vanadium film on PS, and then the obtained PS/V2O5 nanorods were functionalized with dispersed Au nanoparticles. Various analytical techniques, such as field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), have been employed to investigate the properties of PS/V2O5:Au. Herein, the PS/V2O5:Au sample exhibited improved NO2-sensing performances in response, stability and selectivity at room temperature (25[Formula: see text]C), compared with the pure PS/V2O5 nanorods. These phenomena were closely related to not only the dispersed Au nanoparticles acting as a catalyst but also the p-n heterojunctions between PS and V2O5 nanorods. Whereas, more Au nanoparticles suppressed the improvement of response to NO2 gas.

Decorated CNT based on porous silicon for hydrogen gas sensing at room temperature

RSC Advances ◽  
2016 ◽  
Vol 6 (50) ◽  
pp. 44410-44414 ◽  
Author(s):  
Hamid Ghorbani Shiraz ◽  
Fatemeh Razi Astaraei ◽  
Somayeh Fardindoost ◽  
Zahra Sadat Hosseini
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Gas Sensing ◽  
Hydrogen Gas

A new triple-component sensor for detection of H2 was developed based on porous silicon and CNTs.

Sign in / Sign up

Export Citation Format

Share Document