Effect of electron–phonon interaction on surface states in wurtzite nitride semiconductors under pressure

2012 ◽  
Vol 52 (3) ◽  
pp. 514-522 ◽  
Author(s):  
G.X. Li ◽  
Z.W. Yan
Keyword(s):  
Surface States ◽  
Nitride Semiconductors ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

SELF-TRAPPING ENERGY AND EFFECTIVE MASS OF POLARON IN WURTZITE NITRIDE SEMICONDUCTORS

2005 ◽  
Vol 19 (05) ◽  
pp. 211-219 ◽  
Author(s):  
ZU-WEI YAN
Keyword(s):  
Effective Mass ◽  
Nitride Semiconductors ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Zinc Blende ◽  
Wurtzite Crystal Structure ◽  
Anisotropy Effect ◽  
Self Trapping ◽  
Dielectric Continuum ◽  
Dielectric Continuum Model

A variational approach is used to study the intermediate-coupling polaron in bulk III-V nitride semiconductors with wurtzite crystal structure within the macroscopic dielectric continuum model and the uniaxial model. The polaronic self-trapping energy and effective mass are theoretically derived for the LO and TO polarizations mixing due to the anisotropy effect. The numerical computation has been performed for the polaronic self-trapping energy and effective mass for wurtzite nitrides GaN , AlN and InN . The results show that the self-trapping energies of the wurtzite nitrides are bigger than the zinc-blende structures above calculated materials. It is also found that the structure anisotropy increases the electron–phonon interaction in wurtizte nitride semiconductors. It indicates that the LO-like phonon influence on the polaronic effective mass and self-trapping energy are dominant and anisotropy effect is obvious.

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