Influence of post-deposition annealing on the structural, optical and electrical properties of Li and Mg co-doped ZnO thin films deposited by sol–gel technique

2011 ◽  
Vol 49 (5) ◽  
pp. 527-536 ◽  
Author(s):  
C. Ravichandran ◽  
G. Srinivasan ◽  
Craig Lennon ◽  
S. Sivananthan ◽  
J. Kumar
2009 ◽  
Vol 255 (23) ◽  
pp. 9413-9419 ◽  
Author(s):  
Jianlin Chen ◽  
Ding Chen ◽  
Jianjun He ◽  
Shiying Zhang ◽  
Zhenhua Chen

2014 ◽  
Vol 50 (8) ◽  
pp. 1-4 ◽  
Author(s):  
Robina Ashraf ◽  
Saira Riaz ◽  
Mahwish Bashir ◽  
Usman Khan ◽  
Shahzad Naseem

Optik ◽  
2016 ◽  
Vol 127 (11) ◽  
pp. 4645-4649 ◽  
Author(s):  
Akbar Davoodi ◽  
Mohammad Tajally ◽  
Omid Mirzaee ◽  
Akbar Eshaghi

2012 ◽  
Vol 557-559 ◽  
pp. 1641-1644
Author(s):  
Zhan Chang Pan ◽  
Xin Long Tian ◽  
Guang Hui Hu ◽  
Chu Min Xiao ◽  
Zhi Gang Wei ◽  
...  

Al–Sn co-doped ZnO thin films were fabricated onto quartz glass substrates by the sol-gel method. The surface morphology, electrical and optical properties at different post-deposition heating temperatures were investigated. The grains of preferred c-axis showed a well-mixed microstructure and the peak height was enhanced with the post-deposition heating temperature increasing from 400°C to 600°C. Doped films showed a preferential orientation along the (002) plane, while the preferential orientation changed to the (101) plane when temperature was higher than 500°C. The lowest resistivity 6×10–3Ω•cm was observed from samples made at 500°C, with an average 91.2% optical transmittance in the visible range. In this study, optical band gap of all the doped films were broadened, regardless of post–deposition heating temperature.


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