Magnetization reversal and spin accumulation in nonmagnetic metals by spin injection from lateral Co/Cu, Co/Al heterojunctions

2008 ◽  
Vol 43 (3) ◽  
pp. 153-161
Author(s):  
Oliver Posth ◽  
Mario Brands ◽  
Günter Dumpich
2012 ◽  
Vol 109 (10) ◽  
Author(s):  
A. Jain ◽  
J.-C. Rojas-Sanchez ◽  
M. Cubukcu ◽  
J. Peiro ◽  
J. C. Le Breton ◽  
...  

Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.


2013 ◽  
Vol 86 (4) ◽  
Author(s):  
Abhinav Jain ◽  
Juan-Carlos Rojas-Sanchez ◽  
Murat Cubukcu ◽  
Julian Peiro ◽  
Jean-Christophe Le Breton ◽  
...  

SPIN ◽  
2018 ◽  
Vol 08 (01) ◽  
pp. 1840004 ◽  
Author(s):  
A. Das ◽  
S. T. Jousma ◽  
T. Banerjee

We demonstrate an electric field control of spin lifetime at room temperature, across a semiconducting interface of Nb:STO using Ni/AlOx as spin injection contacts. We achieve this by a careful tailoring of the potential landscape in Nb:STO, driven by the strong response of the intrinsically large dielectric permittivity in STO to electric fields. The built-in electric field at the Schottky interface with Nb:STO tunes the intrinsic Rashba spin–orbit fields leading to a bias dependence of the spin lifetime in Nb:STO. Such an electric field driven modulation of spin accumulation has not been reported earlier using conventional semiconductors. This not only underpins the necessity of a careful design of the spin injection contacts but also establishes the importance of Nb:STO as a rich platform for exploring spin–orbit driven phenomena in complex oxide based spintronic devices.


2004 ◽  
Author(s):  
Roger J. Elliott ◽  
Ernest M. Epshtein ◽  
Yuri V. Gulyaev ◽  
Peter E. Zilberman

2008 ◽  
Vol 77 (17) ◽  
Author(s):  
J.-E. Wegrowe ◽  
S. M. Santos ◽  
M.-C. Ciornei ◽  
H.-J. Drouhin ◽  
J. M. Rubí

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