Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths
2006 ◽
Vol 40
(4-6)
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pp. 306-312
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1987 ◽
Vol 48
(C5)
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pp. C5-457-C5-461
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2017 ◽
Vol 17
(3)
◽
pp. 398-402
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