Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT

2006 ◽  
Vol 40 (4-6) ◽  
pp. 562-566 ◽  
Author(s):  
Min-Woo Ha ◽  
Seung-Chul Lee ◽  
Soo-Seong Kim ◽  
Chong-Man Yun ◽  
Min-Koo Han
Keyword(s):  
Breakdown Voltage ◽  
Gan Hemt ◽  
High Breakdown Voltage

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

High breakdown voltage AlGaN/GaN HEMT with high‐K/low‐K compound passivation

2015 ◽  
Vol 51 (1) ◽  
pp. 104-106 ◽  
Author(s):  
Jiangfeng Du ◽  
Nanting Chen ◽  
Peilin Pan ◽  
Zhiyuan Bai ◽  
Liang Li ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Gan Hemt ◽  
High Breakdown Voltage ◽  
High K ◽  
Low K

A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

2019 ◽  
Vol 7 (39) ◽  
pp. 12075-12079 ◽  
Author(s):  
Dingbo Chen ◽  
Zhikun Liu ◽  
Jinghan Liang ◽  
Lijun Wan ◽  
Zhuoliang Xie ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
High Breakdown Voltage

This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT).

Design and Demonstration of High Breakdown Voltage GaN-HEMT using Field Plate Structure for Power Electronics Applications

2003 ◽  
Author(s):  
Wataru Saito ◽  
Yoshiharu Takada ◽  
Masahiko Kuraguchi ◽  
Kunio Tsuda ◽  
Ichiro Omura ◽  
...  
Keyword(s):  
Power Electronics ◽  
Breakdown Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemt ◽  
High Breakdown Voltage
Sign in / Sign up

Export Citation Format

Share Document