Optimization of the p–i interface properties in thin film microcrystalline silicon solar cell

2010 ◽  
Vol 94 (11) ◽  
pp. 1864-1868 ◽  
Author(s):  
S.N. Agbo ◽  
J. Krč ◽  
R.A.C.M.M. van Swaaij ◽  
M. Zeman
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Interface Properties ◽  
Microcrystalline Silicon

High Haze and Low Resistive MgO/AZO Bi-layer Transparent Conducting Oxide for Thin Film Solar Cells

2011 ◽  
Vol 1327 ◽  
Author(s):  
Dong Won Kang ◽  
Jong Seok Woo ◽  
Sung Hwan Choi ◽  
Seung Yoon Lee ◽  
Heon Min. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Transparent Conducting Oxide ◽  
Visible Region ◽  
Xrd Analysis ◽  
Thin Film Solar Cells ◽  
Microcrystalline Silicon ◽  
Transparent Conducting

ABSTRACTWe have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.

Structural analyses of seeded thin film microcrystalline silicon solar cell

2012 ◽  
Vol 22 (3) ◽  
pp. 346-355 ◽  
Author(s):  
S. N. Agbo ◽  
S. Dobrovolskiy ◽  
G. Wegh ◽  
R. A. C. M. M. van Swaaij ◽  
F. D. Tichelaar ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Microcrystalline Silicon

The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Solar Cell ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Double Layers ◽  
Crystalline Silicon Solar Cell

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

Sub-5 µm Thin Film Crystalline Silicon Solar Cell on Alumina Ceramic Substrate

1993 ◽  
Vol 32 (Part 2, No. 6A) ◽  
pp. L770-L773 ◽  
Author(s):  
Kenichi Ishii ◽  
Hideshi Nishikawa ◽  
Tetsuo Takahashi ◽  
Yutaka Hayashi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Alumina Ceramic ◽  
Ceramic Substrate ◽  
Crystalline Silicon Solar Cell

Case study of failure analysis in thin film silicon solar cell

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1800-1803 ◽  
Author(s):  
D. Mello ◽  
R. Ricciari ◽  
A. Battaglia ◽  
M. Foti ◽  
C. Gerardi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Failure Analysis ◽  
Silicon Solar Cell ◽  
Thin Film Silicon

Flexible monocrystalline Si films for thin film devices from transfer processes

2003 ◽  
Vol 769 ◽  
Author(s):  
Christopher Berge ◽  
Thomas A. Wagner ◽  
Willi Brendle ◽  
Cecilia Craff-Castillo ◽  
Markus B. Schubert ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Mechanical Stability ◽  
Silicon Films ◽  
The Past ◽  
Transfer Processes ◽  
Bending Radius ◽  
Si Films ◽  
Thin Film Devices

AbstractTransfer of monocrystalline silicon films to arbitrary foreign substrates is a promising way for the fabrication of high quality silicon films on foreign substrates, demonstrated by solar cell efficiencies on glass as high as 16.6 % in the past. Transfer technologies also enable the use of flexible substrates. This paper investigates the mechanical stability of the separation layer for two different morphologies. First measurements on the minimum bending radius of unsupported silicon films are presented that allow us to estimate minimum curvatures for flexible monocrystalline devices. Finally, we report the first flexible monocrystalline thin film silicon solar cell of 4 cm2 with an independently confirmed efficiency of 14.6 %.

Sign in / Sign up

Export Citation Format

Share Document