Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

2006 ◽  
Vol 90 (18-19) ◽  
pp. 3438-3443 ◽  
Author(s):  
G. Agostinelli ◽  
A. Delabie ◽  
P. Vitanov ◽  
Z. Alexieva ◽  
H.F.W. Dekkers ◽  
...  
Keyword(s):  
Negative Charge ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Type Silicon ◽  
P Type

AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals

1992 ◽  
Vol 31 (Part 1, No. 8) ◽  
pp. 2319-2321 ◽  
Author(s):  
Hirofumi Shimizu ◽  
Chusuke Munakata
Keyword(s):  
Silicon Wafers ◽  
Type Silicon ◽  
P Type

EBIC MEASUREMENT OF BULK AND SURFACE RECOMBINATION IN p-TYPE SILICON : INFLUENCE OF OXIDATION AND HYDROGENATION

1989 ◽  
Vol 50 (C6) ◽  
pp. C6-187-C6-187
Author(s):  
I. DELIDAIS ◽  
P. MAUGIS ◽  
D. BALLUTAUD ◽  
N. TABET ◽  
J.-L. MAURICE
Keyword(s):  
Surface Recombination ◽  
Type Silicon ◽  
P Type

Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 283-288 ◽  
Author(s):  
Maxim Trushin ◽  
O.F. Vyvenko ◽  
Teimuraz Mchedlidze ◽  
Oleg Kononchuk ◽  
Martin Kittler
Keyword(s):  
Oxygen Concentration ◽  
Dislocation Structure ◽  
Electronic States ◽  
Silicon Wafers ◽  
Experimental Investigations ◽  
Deformation Potential ◽  
Screw Dislocations ◽  
Type Silicon ◽  
Frenkel Effect ◽  
P Type

The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.

Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers*

1984 ◽  
Vol 23 (Part 1, No. 11) ◽  
pp. 1451-1461 ◽  
Author(s):  
Chusuke Munakata ◽  
Shigeru Nishimatsu ◽  
Noriaki Honma ◽  
Kunihiro Yagi
Keyword(s):  
Silicon Wafers ◽  
Type Silicon ◽  
P Type
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