Copper inclusion and migration from the back contact in CdTe solar cells

2004 ◽  
Author(s):  
C Corwine
Keyword(s):  
Solar Cells ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
And Migration

Synthesis of high-quality ZnTe:Cu films as a back contact layer for CdTe solar cells

2021 ◽  
Author(s):  
Xinlu Lin ◽  
Yufeng Zhang ◽  
Ziyao Zhu ◽  
Qiuchen Wu ◽  
Xiangxin Liu
Keyword(s):  
Solar Cells ◽  
Contact Layer ◽  
Back Contact ◽  
High Quality ◽  
Cdte Solar Cells

scholarly journals Band diagrams and performance of CdTe solar cells with a Sb2Te3 back contact buffer layer

AIP Advances ◽  
2011 ◽  
Vol 1 (4) ◽  
pp. 042152 ◽  
Author(s):  
Songbai Hu ◽  
Zhe Zhu ◽  
Wei Li ◽  
Lianghuan Feng ◽  
Lili Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
And Performance

Superior stability of ultra thin CdTe solar cells with simple Cu/Au back contact

2015 ◽  
Vol 582 ◽  
pp. 105-109 ◽  
Author(s):  
Ivan Rimmaudo ◽  
Andrei Salavei ◽  
Bing Lei Xu ◽  
Simone Di Mare ◽  
Alessandro Romeo
Keyword(s):  
Solar Cells ◽  
Back Contact ◽  
Cdte Solar Cells

scholarly journals Nanocomposite (CuS) (ZnS)1 thin film back contact for CdTe solar cells: Toward a bifacial device

2018 ◽  
Vol 186 ◽  
pp. 227-235 ◽  
Author(s):  
Kamala Khanal Subedi ◽  
Ebin Bastola ◽  
Indra Subedi ◽  
Zhaoning Song ◽  
Khagendra P. Bhandari ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Back Contact ◽  
Cdte Solar Cells

scholarly journals Properties of Arsenic–Doped ZnTe Thin Films as a Back Contact for CdTe Solar Cells

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3706 ◽  
Author(s):  
Ochai Oklobia ◽  
Giray Kartopu ◽  
Stuart J. C. Irvine
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Open Circuit ◽  
Activation Process ◽  
Back Contact ◽  
Contact Activation ◽  
Doping Density ◽  
Cdte Solar Cells ◽  
Absorber Doping ◽  
P Type

As-doped polycrystalline ZnTe layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated as a back contact for CdTe solar cells. While undoped ZnTe films were essentially insulating, the doped layers showed significant rise in conductivity with increasing As concentration. High p-type carrier densities up 4.5 × 1018 cm−3 was measured by the Hall-effect in heavily doped ZnTe:As films, displaying electrical properties comparable to epitaxial ZnTe single crystalline thin films in the literature. Device incorporation with as-deposited ZnTe:As yielded lower photovoltaic (PV) performance compared to reference devices, due to losses in the open-circuit potential (VOC) and fill factor (FF) related to reducing p-type doping density (NA) in the absorber layer. Some minor recovery observed in absorber doping following a Cl-free post–ZnTe:As deposition anneal in hydrogen at 420 °C contributed to a slight improvement in VOC and NA, highlighting the significance of back contact activation. A mild CdCl2 activation process on the ZnTe:As back contact layer via a sacrificial CdS cap layer has been assessed to suppress Zn losses, which occur in the case of standard CdCl2 anneal treatments (CHT) via formation of volatile ZnCl2. The CdS sacrificial cap was effective in minimising the Zn loss. Compared to untreated and non-capped, mild CHT processed ZnTe:As back contacted devices, mild CHT with a CdS barrier showed the highest recovery in absorber doping and an ~10 mV gain in VOC, with the best cell efficiency approaching the baseline devices.

Preparation of Cu2Te Thin Films and Back-Contact Formation of CdTe Solar Cells

2009 ◽  
Vol 48 (8) ◽  
pp. 085501 ◽  
Author(s):  
Bin Lv ◽  
Xia Di ◽  
Wei Li ◽  
Lianghuan Feng ◽  
Zhi Lei ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Back Contact ◽  
Contact Formation ◽  
Cdte Solar Cells

Highly Arsenic Doped CdTe Layers for the Back Contacts of CdTe Solar Cells

2007 ◽  
Vol 1012 ◽  
Author(s):  
Vincent Barrioz ◽  
Yuri Y. Proskuryakov ◽  
Eurig W. Jones ◽  
Jon D. Major ◽  
Stuart J.C. Irvine ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Chemical Vapour ◽  
Cdte Layer ◽  
Open Circuit ◽  
Organic Chemical ◽  
Back Contact ◽  
Cdte Solar Cells ◽  
Current Voltage ◽  
Metal Organic

AbstractIn an effort to overcome the lack of a suitable metal as an ohmic back contact for CdTe solar cells, a study was carried out on the potential for using a highly arsenic (As) doped CdTe layer with metallization. The deposition of full CdTe/CdS devices, including the highly doped CdTe:As and the CdCl2 treatment, were carried out by metal organic chemical vapour deposition (MOCVD), in an all-in-one process with no etching being necessary. They were characterized and compared to control devices prepared using conventional bromine-methanol back contact etching. SIMS and C-V profiling results indicated that arsenic concentrations of up to 1.5 × 1019 at·cm-3 were incorporated in the CdTe. Current-voltage (J-V) characteristics showed strong improvements, particularly in the open-circuit voltage (Voc) and series resistance (Rs): With a 250 nm thick doped layer, the series resistance was reduced from 9.8 Ω·cm2 to 1.6 Ω·cm2 for a contact area of 0.25 cm2; the J-V curves displayed no rollover, while the Voc increased by up to 70 mV (~ 12 % rise). Preliminary XRD data show that there may be an As2Te3 layer at the CdTe surface which could be contributing to the low barrier height of this contact.

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