Pentiptycene-tbutylpyrene based poly(arylene-ethynylene)s: Highly sensitive and selective TNT sensor in aqueous as well as vapor phase

2017 ◽  
Vol 252 ◽  
pp. 901-911 ◽  
Author(s):  
Tanaji K. Ghorpade ◽  
Akshaya K. Palai ◽  
Sangram K. Rath ◽  
Sandeep K. Sharma ◽  
Kathi Sudarshan ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Highly Sensitive

Highly Sensitive and Discriminative Detection of BTEX in the Vapor Phase: A Film-Based Fluorescent Approach

2018 ◽  
Vol 10 (41) ◽  
pp. 35647-35655 ◽  
Author(s):  
Zhaolong Wang ◽  
Ke Liu ◽  
Xingmao Chang ◽  
Yanyu Qi ◽  
Congdi Shang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Highly Sensitive

CdAg Alloy@Polymer dots of Biginelli Polyamide for Highly Sensitive and Selective Recognition of Nerve Agent mimic in an Aqueous and Vapor phase

2021 ◽  
Author(s):  
Manpreet Kaur ◽  
Navneet Kaur ◽  
Narinder Singh
Keyword(s):  
Vapor Phase ◽  
Nerve Agents ◽  
Nerve Agent ◽  
Selective Recognition ◽  
Highly Sensitive ◽  
Polymer Dots

In today’s world, toxic nerve agents pose a significant threat to humankind and their detection methodology requires an advanced, facile, desirable method that must be quickly responding, handy and economic....

A naphthalimide-based fluorescent probe for the highly sensitive and selective detection of nerve agent mimic DCP in solution and vapor phase

2020 ◽  
Vol 44 (25) ◽  
pp. 10713-10718
Author(s):  
Hui Xu ◽  
Han Zhang ◽  
Lei Zhao ◽  
Cheng Peng ◽  
Guohua Liu ◽  
...  
Keyword(s):  
Detection Limit ◽  
Fluorescent Probe ◽  
Vapor Phase ◽  
Nerve Agent ◽  
Selective Detection ◽  
Low Detection Limit ◽  
Highly Sensitive ◽  
Excellent Selectivity

The fluorescent probe for DCP displays excellent selectivity and sensitivity with a low detection limit of 5.5 nM in DMF.

Large-scale fabrication of highly sensitive SnO2 nanowire network gas sensors by single step vapor phase growth

2012 ◽  
Vol 165 (1) ◽  
pp. 97-103 ◽  
Author(s):  
In-Sung Hwang ◽  
Sun-Jung Kim ◽  
Joong-Ki Choi ◽  
Jong-Jin Jung ◽  
Do Joon Yoo ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Gas Sensors ◽  
Large Scale ◽  
Single Step ◽  
Phase Growth ◽  
Vapor Phase Growth ◽  
Nanowire Network ◽  
Highly Sensitive

Ovarian Dysfunction in Fetally Irradiated Beagles

1977 ◽  
Vol 35 ◽  
pp. 658-659
Author(s):  
T. M. Seed ◽  
M. H. Sanderson ◽  
D. L. Gutzeit ◽  
T. E. Fritz ◽  
D. V. Tolle ◽  
...  
Keyword(s):  
Gamma Rays ◽  
Low Dose ◽  
Long Term Effects ◽  
Ovarian Dysfunction ◽  
Dose Rates ◽  
Highly Sensitive ◽  
Microscopic Evaluation ◽  
Ovarian Pathology ◽  
Normal Offspring

The developing mammalian fetus is thought to be highly sensitive to ionizing radiation. However, dose, dose-rate relationships are not well established, especially the long term effects of protracted, low-dose exposure. A previous report (1) has indicated that bred beagle bitches exposed to daily doses of 5 to 35 R 60Co gamma rays throughout gestation can produce viable, seemingly normal offspring. Puppies irradiated in utero are distinguishable from controls only by their smaller size, dental abnormalities, and, in adulthood, by their inability to bear young.We report here our preliminary microscopic evaluation of ovarian pathology in young pups continuously irradiated throughout gestation at daily (22 h/day) dose rates of either 0.4, 1.0, 2.5, or 5.0 R/day of gamma rays from an attenuated 60Co source. Pups from non-irradiated bitches served as controls. Experimental animals were evaluated clinically and hematologically (control + 5.0 R/day pups) at regular intervals.

Fluorescence ratio imaging of dynamic intracellular ionic signals

1988 ◽  
Vol 46 ◽  
pp. 42-43
Author(s):  
R. Y. Tsien ◽  
A. Minta ◽  
M. Poenie ◽  
J.P.Y. Kao ◽  
A. Harootunian
Keyword(s):  
Binding Sites ◽  
Living Cells ◽  
Molecular Engineering ◽  
Ph Indicators ◽  
Highly Sensitive ◽  
Fluorescence Ratio Imaging ◽  
Ratio Imaging ◽  
Technical Advances ◽  
Indicator Dyes ◽  
Fluorescein Dyes

Recent technical advances now enable the continuous imaging of important ionic signals inside individual living cells with micron spatial resolution and subsecond time resolution. This methodology relies on the molecular engineering of indicator dyes whose fluorescence is strong and highly sensitive to ions such as Ca2+, H+, or Na+, or Mg2+. The Ca2+ indicators, exemplified by fura-2 and indo-1, derive their high affinity (Kd near 200 nM) and selectivity for Ca2+ to a versatile tetracarboxylate binding site3 modeled on and isosteric with the well known chelator EGTA. The most commonly used pH indicators are fluorescein dyes (such as BCECF) modified to adjust their pKa's and improve their retention inside cells. Na+ indicators are crown ethers with cavity sizes chosen to select Na+ over K+: Mg2+ indicators use tricarboxylate binding sites truncated from those of the Ca2+ chelators, resulting in a more compact arrangement of carboxylates to suit the smaller ion.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Various technic for the measurement of step thickness on crystal surfaces

1978 ◽  
Vol 36 (1) ◽  
pp. 438-439
Author(s):  
C. Boulesteix ◽  
C. Colliex ◽  
C. Mory ◽  
B. Pardo ◽  
D. Renard
Keyword(s):  
Critical Thickness ◽  
Symmetric Case ◽  
Transmitted Intensity ◽  
Crystal Surfaces ◽  
Bright Field ◽  
Excited Wave ◽  
Highly Sensitive ◽  
Contrast Mechanisms ◽  
Step Thickness ◽  
Thickness Variations

Contrast mechanisms, which are responsible of the various types of image formation, are generally thickness dependant. In the following, two imaging modes in the 100 kV CTEM are described : they are highly sensitive to thickness variations and can be used for quantitative estimations of step heights.Detailed calculations (1) of the bright-field intensity have been carried out in the 3 (or 2N+l)-beam symmetric case. They show that in given conditions, the two important symmetric Bloch waves interfere most strongly at a critical thickness for which they have equal emergent amplitudes (the more excited wave at the entrance surface is also the more absorbed). The transmitted intensity I for a Nd2O3 specimen has been calculated as a function of thickness t. The capacity of the method to detect a step and measure its height can be more clearly deduced from a plot of dl/Idt as shown in fig. 1.

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