New generation SiC based field effect transistor gas sensors

2013 ◽  
Vol 179 ◽  
pp. 95-106 ◽  
Author(s):  
Mike Andersson ◽  
Ruth Pearce ◽  
Anita Lloyd Spetz
2015 ◽  
Vol 44 (8) ◽  
pp. 2087-2107 ◽  
Author(s):  
Congcong Zhang ◽  
Penglei Chen ◽  
Wenping Hu

This tutorial review reports the recent progress on OFET gas sensors, including their working principle, and protocols for high-performance sensing.


Author(s):  
Duan-Wu Liu ◽  
Yamin Zhang ◽  
Xiangyang Li ◽  
Qi Xiao ◽  
Wenjing Sun ◽  
...  

Nonvolatile memory devices based on organic materials are promising for new generation of portable or flexible electronics. Herein, we designed and synthesized two pyrene-fused azaindacene configurational isomers, syn-B2IPIO and anti-B2IPIO,...


2008 ◽  
Vol 6 (6) ◽  
pp. 796-799 ◽  
Author(s):  
Ning Peng ◽  
Qing Zhang ◽  
Yi Chau Lee ◽  
Hui Huang ◽  
Ooi Kiang Tan ◽  
...  

2014 ◽  
Vol 2 (23) ◽  
pp. 4539-4544 ◽  
Author(s):  
Yebyeol Kim ◽  
Tae Kyu An ◽  
Jiye Kim ◽  
Jihun Hwang ◽  
Seonuk Park ◽  
...  

The receptor material (OA-GO)/polymeric semiconductor (F8T2) structure is newly introduced to active layer of OFET gas sensors and demonstrated to have better sensing ability than a comparable device with a polymer-only active layer.


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