Humidity sensor based on quartz tuning fork coated with sol–gel-derived nanocrystalline zinc oxide thin film

2007 ◽  
Vol 123 (1) ◽  
pp. 299-305 ◽  
Author(s):  
Xiaofeng Zhou ◽  
Tao Jiang ◽  
Jian Zhang ◽  
Xiaohua Wang ◽  
Ziqiang Zhu
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Humidity Sensor ◽  
Tuning Fork ◽  
Sol Gel ◽  
Quartz Tuning Fork ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Nanocrystalline Zinc Oxide

Ambient Energy Harvesting of Piezoelectric ZnO Thin Film Dependence of Spin Speed and Annealing Temperature

2020 ◽  
Vol 981 ◽  
pp. 51-58
Author(s):  
Agus Geter Edy Sutjipto ◽  
Yit Pei Shian ◽  
Ali Shaitir ◽  
Mohamad Ashry Jusoh ◽  
Ari Legowo
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Energy Harvesting ◽  
Band Gap ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Zno Film ◽  
Zinc Oxide Thin Film ◽  
Spin Speed

This research deals with ambient energy harvesting by using zinc oxide thin film. The objectives of this thesis are to prove the ZnO film as a piezoelectric material can produce electric when vibration is applied and determine its optimal voltage. The thesis describes the sol gel spin coating technique to fabricate zinc oxide thin film. Zinc acetate dehydrate, absolute ethanol and diethanolamine were used in this thesis to act as sol gel precursor. Sol gel was coated on glass slide which wrapped by aluminum foil. The thin film was formed after preheating and annealing. The thin film was characterized by X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Photoluminescence spectroscopy (PL) and Ultraviolet-visible spectroscopy (UV-Vis) as well as analyzed using vibration technique. From XRD results, the films were preferentially diffracted at around 65° which corresponding to (1 1 2) diffraction phase. From FESEM results, it was observed that when the spin speed was increased at same annealing temperature, the thickness was also decreased. When the annealing temperature was increased at same spin speed, both grain size and thickness were increased. From the PL results, there was only film with spin speed of 2000 rpm and annealing temperature of 300 °C had slightly left wavelength which was 380 nm. Annealing temperature would affect only the intensity of PL wavelength. From the results of UV-Vis, it was observed that when the spin speed was increased at same annealing temperature, the band gap was decreased. When the annealing temperature was increased at same spin speed, the band gap was decreased. Piezoelectric test had proven the ZnO film could produce electricity. The maximum voltage (20.7 mV) was produced by the ZnO film with spin speed of 2000 rpm and annealing temperature of 300 °C.

Nanostructured Zinc Oxide Thin Film Based Humidity Sensor Prepared by Sol-Gel Immersion Technique

2013 ◽  
Vol 667 ◽  
pp. 553-557 ◽  
Author(s):  
M. Awalludin ◽  
Mohamad Hafiz Mamat ◽  
Mohd Zainizan Sahdan ◽  
Z. Mohamad ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Immersion Time ◽  
Humidity Sensor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Nanostructured Zinc Oxide ◽  
Time Scanning ◽  
Immersion Technique ◽  
Intensity Increment

This paper focus on nanostructured Zinc Oxide (ZnO) thin film based humidity sensor prepared using sol-gel method immersion technique at different immersion time. Scanning Electron Microscopy (SEM) investigations reveal nanorods ZnO were deposited on glass substrate with nanorods length increased with immersion time. All fabricated sensors show current intensity increment response when relative humidity is increased. Sensor fabricated at 16 hr immersion time shows the highest sensitivity in this study.

H2O-Assisted O2 Adsorption in Sol-Gel Derived Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

2011 ◽  
Vol 14 (6) ◽  
pp. H235 ◽  
Author(s):  
Wan-Fang Chung ◽  
Ting-Chang Chang ◽  
Hung-Wei Li ◽  
Shih-Ching Chen ◽  
Yu-Chun Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
O2 Adsorption ◽  
Indium Gallium
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