A capacitive humidity sensor integrated with micro heater and ring oscillator circuit fabricated by CMOS–MEMS technique

2007 ◽  
Vol 122 (2) ◽  
pp. 375-380 ◽  
Author(s):  
Ching-Liang Dai
Sensors ◽  
2010 ◽  
Vol 10 (11) ◽  
pp. 10095-10104 ◽  
Author(s):  
Ming-Zhi Yang ◽  
Ching-Liang Dai ◽  
De-Hao Lu

Author(s):  
Vincent P. J. Chung ◽  
Jack K.-C. Liang ◽  
Chao-Lin Cheng ◽  
Ming-Chuen Yip ◽  
Weileun Fang

2015 ◽  
Vol 214 ◽  
pp. 181-188 ◽  
Author(s):  
Vincent P.J. Chung ◽  
Ming-Chuen Yip ◽  
Weileun Fang

2010 ◽  
Vol 19 (1) ◽  
pp. 183-191 ◽  
Author(s):  
Nathan Lazarus ◽  
Sarah S. Bedair ◽  
Chiung-C. Lo ◽  
Gary K. Fedder

Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.


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