Deposition of Pt-catalyst in a micro-channel of a silicon reactor: Application to gas micro-TAS working at high temperature

2006 ◽  
Vol 118 (1-2) ◽  
pp. 297-304 ◽  
Author(s):  
M. Roumanie ◽  
C. Pijolat ◽  
V. Meille ◽  
C. De Bellefon ◽  
P. Pouteau ◽  
...  
2004 ◽  
Vol 49 (5) ◽  
pp. 447-451
Author(s):  
Yanchuan Guo ◽  
Haitao Xu ◽  
Bing Zhang ◽  
Fengmei Han ◽  
Lijuan Chen ◽  
...  

2007 ◽  
Vol 1040 ◽  
Author(s):  
L. E. Rodak ◽  
Sridhar Kuchibhatla ◽  
P. Famouri ◽  
Ting Liu ◽  
D. Korakakis

AbstractAluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nano-electromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro- channels for fuel cell applications, and micromechanical resonators.This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.


2017 ◽  
Vol 56 (15) ◽  
pp. 4250 ◽  
Author(s):  
Yaxin Wang ◽  
Haihong Bao ◽  
Zengling Ran ◽  
Jingwei Huang ◽  
Shuang Zhang

2021 ◽  
Vol 11 (5) ◽  
pp. 2349
Author(s):  
Seung Gi Lee ◽  
Yong-Hoon Shin ◽  
Jaeyeong Park ◽  
Il Soon Hwang

The corrosion of nuclear-grade steels in lead–bismuth eutectic (LBE) complicates the realization of high coolant temperatures. Corrosion tests of T91, HT9, and SS316L were performed in static cells at 600 °C for 2000 h at an oxygen level of 10−6 wt.%. The obtained corrosion surfaces of post-processed samples were characterized by several microscopy methods. Up to 1000 h, all the alloys exhibited an evolution of duplex oxide layers, which were spalled until 2000 h due to their increased thickness and decreased integrity. Following the spallation, a thin internal Cr-rich oxide layer was formed above the Cr-depleted zone for T91 and HT9. SS316L was penetrated by LBE down to 300 μm in severe cases. A comparison on the corrosion depths of the materials with regard to the parabolic oxidation law with abundant literature data suggests that it may lose its validity once the duplex layer is destroyed as it allows LBE to penetrate the metal substrate.


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