Electrical properties of Sr–Bi–Mn–Fe–O thick-film NTC thermistors prepared by screen printing

2011 ◽  
Vol 167 (2) ◽  
pp. 291-296 ◽  
Author(s):  
Changlai Yuan ◽  
Xinyu Liu ◽  
Meifang Liang ◽  
Changrong Zhou ◽  
Hua Wang
2010 ◽  
Vol 12 (12) ◽  
pp. 2113-2119 ◽  
Author(s):  
Changlai Yuan ◽  
Xiufang Wu ◽  
Jingyue Huang ◽  
Xinyu Liu ◽  
Bo Li

2011 ◽  
Vol 65 (5) ◽  
pp. 836-839 ◽  
Author(s):  
C.L. Yuan ◽  
X.Y. Liu ◽  
C.R. Zhou ◽  
J.W. Xu ◽  
B. Li

2019 ◽  
Vol 33 (27) ◽  
pp. 1950336
Author(s):  
Rabab Sendi

In this study, ZnO nanoparticles and MnO-doped SnO2-based thick film varistors (TFVs) were fabricated using screen printing technique. The sintering temperature had significant impact on the SZM-based TFVs, especially in terms of grain growth, even at a low sintering temperature of 1100[Formula: see text]C. The strong solid-state reaction during sintering may be attributed to the large surface area of the 20 nm ZnO nanoparticles that promoted strong surface reaction even at low sintering temperatures. Moreover, the X-ray diffraction lattice constant and full wave at half maximum data indicated that the sintering process also improved the grain crystallinity with the decrease in intrinsic compressive stress. The sintering temperatures also significantly influenced the electrical properties of the SZM-based TFVs with a significant decrease in the breakdown field from 360 V/mm (sample at 1100[Formula: see text]C) to 158 V/mm (sample at 1250[Formula: see text]C). The grain boundary resistance ([Formula: see text] also experienced a dramatic drop from 266.4 k[Formula: see text] (sample at 1100[Formula: see text]C) to 89.46 k[Formula: see text] (sample at 1250[Formula: see text]C). The sample sintered at 1200[Formula: see text]C exhibited superior electrical behaviors with a nonlinear exponent of 61 and leakage current of 115 [Formula: see text]A. Furthermore, it achieved high permittivity and low dissipation factor at the low frequency range. The conduction behaviors of [Formula: see text] ions with activation energy of approximately 0.6 eV was dominated by decreasing [Formula: see text] and [Formula: see text] defects (around 0.4 eV) with increasing sintering temperature. Therefore, the sintering process can be applied to control the conduction behaviors of SZM-based TFVs doped with ZnO nanoparticle powder and achieve improved structural and electrical properties with good nonlinear behaviors.


2007 ◽  
Vol 544-545 ◽  
pp. 633-636
Author(s):  
Sung Gap Lee ◽  
Sang Man Park

Ferroelectric Pb(Zr0.6Ti0.4)O3 (PZT(60/40)) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The Pt bottom electrodes were screen-printed on the alumina substrate. The PZT(60/40) thick films were annealed at 1050°C for 10min in PbO atmosphere. Pb(Zr0.4Ti0.6)O3 (PZT(40/60)) precursor solution, which prepared by sol-gel method, was spin-coated on the PZT thick films to obtain a densification. These PZT multilayered thick films were annealed at 650°C for 2 h in PbO atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at 590°C for 10min. Its structural and electrical properties of the PZT thick films with the treatment of PZT(40/60) precursor solution coating were investigated. The coating and drying procedure was repeated 4 times. And then the PZT(40/60) precursor solution was spin-coated on the multilayered thick films. A concentration of a coating solution was 1.5 mol/L and the number of coating was repeated from 0~15. The porosity of the thick films was decreased with increasing the number of coatings. All PZT multilayered thick films showed the XRD patterns of typical peroveskite polycrystalline structure. The relative dielectric constant of the PZT-15 (15: number of solution coatings) thick film were 370. And the PZT-15 thick film shows the remanent polarization of 23.5 μC/cm2 and coercive field of 18.0 kV/cm, respectively.


2011 ◽  
Vol 26 (4) ◽  
pp. 387-392 ◽  
Author(s):  
Chang-Lai YUAN ◽  
Xiu-Fang WU ◽  
Xin-Yu LIU ◽  
Jing-Yue HUANG ◽  
Bo LI ◽  
...  

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