Temperature dependence of prismatic slip in a single-crystalline long-period stacking ordered Mg–Zn–Y alloy

2020 ◽  
Vol 178 ◽  
pp. 498-502 ◽  
Author(s):  
Kosuke Takagi ◽  
Michiaki Yamasaki ◽  
Yoji Mine ◽  
Kazuki Takashima
Keyword(s):  
Temperature Dependence ◽  
Prismatic Slip ◽  
Single Crystalline ◽  
Long Period

Superlubricity Relevant in Hard Disk Drive Applications

2016 ◽  
Author(s):  
Shou-Mo Zhang ◽  
Cuong-C. Vu ◽  
Qun-Yang Li ◽  
Norio Tagawa ◽  
Quan-Shui Zheng
Keyword(s):  
Temperature Dependence ◽  
Hard Disk Drive ◽  
Large Scale ◽  
Hard Disk Drives ◽  
Hard Disk ◽  
Disk Drive ◽  
Force Sensor ◽  
Lubricant Layer ◽  
Single Crystalline ◽  
Crystalline Graphite

Reduction of head-media spacing (HMS) keeps crucial during the increase of areal density of hard disk drives (HDD). The design of hard disk drive with a superlubric interface is reported with two schemes for HDI design to realize superlubricity. For the first scheme, the DLC layer is kept on the disk while removing the lubricant layer. The DLC layer on the transducer is replaced by graphene-like layer. The direct contact between head and disk could reduce the HMS to about 2.3 nm. For the second scheme, the DLC layer on disk is further replaced by graphene and the HMS could be reduced to below 1 nm. For the first scheme, the basic proof of concept experiments are conducted using micro-scale graphite island samples. Ultralow COF, with the average of 0.0344 on the interface of single crystalline graphite surface and DLC substrate is demonstrated by AFM. What’s more, the temperature dependence of friction between single crystalline graphite and DLC is measured by micro-force sensor mounted on micro-manipulator. The results show that heating helps to significantly decrease the friction. Desorption of contaminants along the interface is speculated to be the key mechanism for temperature dependence of friction. This work provides the concept of large-scale superlubricity relevant in HDD applications, which could be a promising technology to ultimately reduce HMS for future HDI development.

scholarly journals Eruptive Phenomena as a Source of the Observed Variations of Intrinsic Polarization in Long Period and T Tau Variables

1983 ◽  
Vol 71 ◽  
pp. 515-518
Author(s):  
M. Sole ◽  
G. Strazzulla
Keyword(s):  
Temperature Dependence ◽  
Equivalent Width ◽  
Emission Lines ◽  
Rapid Rise ◽  
Intrinsic Polarization ◽  
Colour Centres ◽  
Long Period ◽  
Uv Photons ◽  
T Tau

ABSTRACTThe correlation between the rapid rise of intrinsic polarization, increasing U-B and enhanced equivalent width of Balmer, H and K emission lines is interpreted as a consequence of the activation of colour centres in circumstellar silicate dust by X/UV photons from flares. The temperature dependence of bleaching is discussed and the number of centres producing polarization changes is estimated.

Temperature dependence of long period structure in polyethylene

1976 ◽  
Vol 18 (10) ◽  
pp. 2494-2502 ◽  
Author(s):  
N. Sultanov ◽  
Sh. Tuichiev ◽  
D. Rashidov
Keyword(s):  
Temperature Dependence ◽  
Long Period

Carrier Transport Mechanism in Single Crystalline Organic Semiconductor Thin Film Elucidated by Visualized Carrier Motion

2016 ◽  
Vol 16 (4) ◽  
pp. 3388-3393
Author(s):  
Kohei Matsubara ◽  
Kentaro Abe ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Transport Process ◽  
Carrier Transport ◽  
Second Harmonic ◽  
Potential Drop ◽  
Transport Processes ◽  
Time Resolved ◽  
Single Crystalline ◽  
Injection Process

Time-resolved microscopic second harmonic generation (TRM-SHG) measurement was conducted to evaluate temperature dependence of the anisotropic carrier transport process in 6,13-Bis(triisopropylsilylethynyl) (TIPS) pentacene single crystalline domains for two orthogonal directions. Enhancement of the electric field induced SHG (EFI-SHG) signal at the electrode edge at low temperature suggests the presence of potential drop in the injection process. We directly evaluated temperature dependence of the carrier mobility by taking into account the potential drop, and concluded that the Marcus theory is appropriate to interpret the carrier transport in anisotropic TIPS pentacene thin film. TRM-SHG method is a facile and effective way to directly visualize transport process in anisotropic materials and to evaluate injection and transport processes simultaneously.

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

2010 ◽  
Vol 645-648 ◽  
pp. 147-150 ◽  
Author(s):  
Eiji Saito ◽  
Sergey Filimonov ◽  
Maki Suemitsu
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
High Rate ◽  
Si Substrate ◽  
Single Crystalline ◽  
Step Process ◽  
Si Substrates ◽  
Sic Film

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

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