Spark plasma assisted in-situ phase evolution and densification of nano-crystalline magnesium silicide – silicon germanium thermo-electric composite: Pulse current effects and densification mechanisms

2018 ◽  
Vol 146 ◽  
pp. 344-348 ◽  
Author(s):  
P Vivekanandhan ◽  
R Murugasami ◽  
S Kumaran
Keyword(s):  
Silicon Germanium ◽  
Pulse Current ◽  
Phase Evolution ◽  
Magnesium Silicide ◽  
Thermo Electric ◽  
Composite Pulse ◽  
Nano Crystalline ◽  
Spark Plasma

scholarly journals Microstructure and properties of nano-laminated Y3Si2C2 ceramics fabricated via in situ reaction by spark plasma sintering

2021 ◽  
Vol 10 (3) ◽  
pp. 578-586
Author(s):  
Lin-Kun Shi ◽  
Xiaobing Zhou ◽  
Jian-Qing Dai ◽  
Ke Chen ◽  
Zhengren Huang ◽  
...  
Keyword(s):  
Spark Plasma Sintering ◽  
Atomic Scale ◽  
Max Phase ◽  
X Ray Diffraction ◽  
Selected Area Electron Diffraction ◽  
Plasma Sintering ◽  
Transmission Electron ◽  
Spark Plasma ◽  
Diffraction Patterns

AbstractA nano-laminated Y3Si2C2 ceramic material was successfully synthesized via an in situ reaction between YH2 and SiC using spark plasma sintering technology. A MAX phase-like ternary layered structure of Y3Si2C2 was observed at the atomic-scale by high resolution transmission electron microscopy. The lattice parameters calculated from both X-ray diffraction and selected area electron diffraction patterns are in good agreement with the reported theoretical results. The nano-laminated fracture of kink boundaries, delamination, and slipping were observed at the tip of the Vickers indents. The elastic modulus and Vickers hardness of Y3Si2C2 ceramics (with 5.5 wt% Y2O3) sintered at 1500 °C were 156 and 6.4 GPa, respectively. The corresponding values of thermal and electrical conductivity were 13.7 W·m-1·K-1 and 6.3×105 S·m-1, respectively.

scholarly journals Further insights into the Fe(ii) reduction of 2-line ferrihydrite: a semi in situ and in situ TEM study

2020 ◽  
Vol 2 (10) ◽  
pp. 4938-4950
Author(s):  
Mario Alberto Gomez ◽  
Ruonan Jiang ◽  
Miao Song ◽  
Dongsheng Li ◽  
Alan Scott Lea ◽  
...  
Keyword(s):  
Catalytic Reduction ◽  
In Situ Tem ◽  
Nano Crystalline

The catalytic reduction of nano-crystalline 2-line ferrihydrite with Fe(ii)(aq) doesn't occur via direct pathways but rather through new intermediate steps.

Phase evolution during laser In-Situ carbide coating

2005 ◽  
Vol 36 (13) ◽  
pp. 797-803 ◽  
Author(s):  
Anshul Singh ◽  
Narendra B. Dahotre
Keyword(s):  
Phase Evolution ◽  
Carbide Coating

Understanding the phase formation kinetics of nano-crystalline kesterite deposited on mesoscopic scaffolds via in situ multi-wavelength Raman-monitored annealing

2016 ◽  
Vol 18 (42) ◽  
pp. 29435-29446 ◽  
Author(s):  
Zhuoran Wang ◽  
Samir Elouatik ◽  
George P. Demopoulos
Keyword(s):  
Real Time ◽  
Phase Formation ◽  
Formation Kinetics ◽  
Nano Crystalline ◽  
Multi Wavelength ◽  
Real Time Information ◽  
Kinetics Of ◽  
Time Information ◽  
Annealing Method

The in situ Raman monitored annealing method is developed in this work to provide real-time information on phase formation and crystallinity evolution of kesterite deposited on a TiO2 mesoscopic scaffold.

In situ phase evolution of TiO2/Ti3C2T heterojunction for enhancing adsorption and photocatalytic degradation

2021 ◽  
Vol 545 ◽  
pp. 149031
Author(s):  
Huiqi Zheng ◽  
Xiaorong Meng ◽  
Jin Chen ◽  
Meidan Que ◽  
Wendong Wang ◽  
...  
Keyword(s):  
Photocatalytic Degradation ◽  
Phase Evolution

Low-Temperature LPCVD MEMS Technologies

2002 ◽  
Vol 729 ◽  
Author(s):  
Roger T. Howe ◽  
Tsu-Jae King
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Rf Mems ◽  
Sige Layer ◽  
Copper Metallization ◽  
Si Films ◽  
P Type ◽  
Mems Process ◽  
Post Deposition

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.

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