Corrigendum to “Emulation of reactor irradiation damage using ion beams” [Scripta Mater. 88 (2014) 33–36]

2014 ◽  
Vol 93 ◽  
pp. 60 ◽  
Author(s):  
G.S. Was ◽  
Z. Jiao ◽  
E. Getto ◽  
K. Sun ◽  
A.M. Monterrosa ◽  
...  
Keyword(s):  
Ion Beams ◽  
Irradiation Damage ◽  
Reactor Irradiation ◽  
Scripta Mater

scholarly journals Emulation of reactor irradiation damage using ion beams

2014 ◽  
Vol 88 ◽  
pp. 33-36 ◽  
Author(s):  
G.S. Was ◽  
Z. Jiao ◽  
E. Getto ◽  
K. Sun ◽  
A.M. Monterrosa ◽  
...  
Keyword(s):  
Ion Beams ◽  
Irradiation Damage ◽  
Reactor Irradiation

scholarly journals Carbon ion radiotherapy for recurrent calf myxoid liposarcoma: a case report

2021 ◽  
Vol 49 (4) ◽  
pp. 030006052110097
Author(s):  
Xiaojun Li ◽  
Yanshan Zhang ◽  
Yancheng Ye ◽  
Ying Qi ◽  
Chunlan Feng ◽  
...  
Keyword(s):  
Soft Tissue ◽  
Soft Tissue Sarcomas ◽  
Myxoid Liposarcoma ◽  
Ion Beams ◽  
Carbon Ion Radiotherapy ◽  
Irradiation Damage ◽  
Radiation Dermatitis ◽  
Complete Disappearance ◽  
Carbon Ion ◽  
The Right

Liposarcoma (LPS) is the most common soft tissue sarcoma. Myxoid LPS (MLPS) is the second most common subtype of LPS and accounts for 25% to 50% of all LPSs. Like most other soft tissue sarcomas, the mainstay of treatment for LPS is inevitably surgery. Multidisciplinary approaches, including surgery, chemotherapy, and radiotherapy, have been successful in the treatment of LPS during the last three decades. Even so, recurrence of LPS remains challenging. Carbon ion beams produce increased energy deposition at the end of their range to form a Bragg peak while minimizing irradiation damage to surrounding tissues, which facilitates more precise dosage and localization than that achieved with photon beams. Furthermore, carbon ion beams have high relative biologic effectiveness. We herein describe a patient who developed recurrent MLPS in the right calf after two surgeries and underwent carbon ion radiotherapy (CIRT), achieving complete disappearance of the tumor. The patient developed Grade 1 radiation dermatitis 30 days after CIRT, but no other acute toxicities were observed. The tumor had completely disappeared by 120 days after CIRT, and the patient remained disease-free for 27 months after CIRT. The CARE guidelines were followed in the reporting of this case.

scholarly journals IMITATING NEUTRON IRRADIATION DAMAGE USING A COMBINATION OF ION BEAMS

2018 ◽  
Vol 14 ◽  
pp. 42
Author(s):  
Václav Šísl ◽  
Martin Ševeček
Keyword(s):  
Neutron Irradiation ◽  
Nuclear Reactor ◽  
Ion Irradiation ◽  
Ion Beams ◽  
Third Party ◽  
Irradiation Damage ◽  
Material Structure ◽  
Monte Carlo Code ◽  
The One ◽  
Induced Defects

There is a strong motivation for using ion beams to imitate neutron irradiation damage, mainly in order to reduce costs and time demands linked to neutron irradiation experiments. The long-term goal of the authors is to create an ion irradiation methodology, which could be employed in the development process of innovative nuclear fuel materials. This methodology will be based on combining of a set of ion beams in such a way that the final distribution of irradiation-induced defects in the material structure is similar to the one which would have been introduced by neutrons in a nuclear reactor. The first part of the methodology is represented by an optimization tool described here. The tool uses a third party Monte Carlo code SRIM to simulate ion transport in a target and to determine the distribution of radiation damage. Subsequently, a custom genetic optimization algorithm is applied to a set of damage distribution profiles to find their optimal combination.

Axial Observation of X-Ray Spectra from a Beam-Foil Source

1988 ◽  
Vol 102 ◽  
pp. 339-342
Author(s):  
J.M. Laming ◽  
J.D. Silver ◽  
R. Barnsley ◽  
J. Dunn ◽  
K.D. Evans ◽  
...  
Keyword(s):  
Spectral Resolution ◽  
Heavy Ion ◽  
Ion Beams ◽  
Beam Axis ◽  
Doppler Broadening ◽  
X Ray ◽  
Beam Foil

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

Development of a conical anode Fe-gun for low voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 978-979
Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Irradiation Damage ◽  
Cold Cathode ◽  
Virtual Source ◽  
Source Position ◽  
Electrostatic Lens ◽  
Electrostatic Lenses ◽  
Wide Range

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

In situ irradiation effects studies in medium- and high-voltage TEM

1995 ◽  
Vol 53 ◽  
pp. 234-235
Author(s):  
Charles W. Allen
Keyword(s):  
Cross Section ◽  
Particle Flux ◽  
Threshold Value ◽  
High Energy ◽  
Irradiation Damage ◽  
Defect Complexes ◽  
Lattice Position ◽  
Electrons And Ions ◽  
The Masses

With respect to structural consequences within a material, energetic electrons, above a threshold value of energy characteristic of a particular material, produce vacancy-interstial pairs (Frenkel pairs) by displacement of individual atoms, as illustrated for several materials in Table 1. Ion projectiles produce cascades of Frenkel pairs. Such displacement cascades result from high energy primary knock-on atoms which produce many secondary defects. These defects rearrange to form a variety of defect complexes on the time scale of tens of picoseconds following the primary displacement. A convenient measure of the extent of irradiation damage, both for electrons and ions, is the number of displacements per atom (dpa). 1 dpa means, on average, each atom in the irradiated region of material has been displaced once from its original lattice position. Displacement rate (dpa/s) is proportional to particle flux (cm-2s-1), the proportionality factor being the “displacement cross-section” σD (cm2). The cross-section σD depends mainly on the masses of target and projectile and on the kinetic energy of the projectile particle.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

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