In situ stress relaxation and diffraction studies across the metal–insulator transition in epitaxial and polycrystalline SmNiO3 thin films

2012 ◽  
Vol 66 (7) ◽  
pp. 463-466 ◽  
Author(s):  
B. Viswanath ◽  
G.H. Aydogdu ◽  
S.D. Ha ◽  
S. Ramanathan
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
In Situ Stress ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

Giant Magnetoresistance Phenomenon in Laser Ablated La0.6y0.07ca0.33mnox Thin Films

1995 ◽  
Vol 397 ◽  
Author(s):  
Dhananjay Kumar ◽  
R. Kalyanaraman ◽  
J. Narayan ◽  
David K. Christen
Keyword(s):  
Thin Films ◽  
Giant Magnetoresistance ◽  
Lattice Parameter ◽  
Insulator Transition ◽  
X Ray Diffraction ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Spin Dependent Scattering ◽  
Resistance Peak

ABSTRACTMicrostructural and magnetoresistance properties of La0.6Y0.07Ca0.33MnOx (Y-doped LCMO) thin films grown in-situ by pulsed laser ablation have been studied. Transmission election microscopy and x-ray diffraction measurements have shown that the Y-doped LCMO thin films grow epitaxially on (100) LaAl03 substrates and are cubic with a lattice parameter of 3.849 ?. The as-deposited films exhibited a metal-insulator transition at 130 K and a giant magnetoresistance (GMR) at 125 K with a MR ratio (dR/RH) of 1500% in the presence of a magnetic field of 6 Tesla. Such a colossal value of MR ratio for as-deposited Y-doped LCMO films is quite promising keeping in view the fact that these films were unannealed and not optimized. We ascribe this magnetoresistance to spin-dependent electron scattering coupled with the presence of intervening O2. ions across Mn3+ and Mn4+ with suppressed separation between Mn-O layers caused by smaller sized Y-dopant. The effect of annealing on the positive-shift of metal-insulator transition temperature and the improvement in GMR ratio has also been discussed. We also report a non-ohmic response in the Y-doped LCMO films which is observed only in the region of the resistance peak and lends support to a conduction mechanism in these materials based on spin-dependent scattering of electrons.

Size effects on stress relaxation across the metal–insulator transition in VO2 thin films

2011 ◽  
Vol 26 (11) ◽  
pp. 1384-1387 ◽  
Author(s):  
Viswanath Balakrishnan ◽  
Changhyun Ko ◽  
Shriram Ramanathan
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Size Effects ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Image Position ◽  
Vo2 Thin Films

Abstract

Low field magnetoresistance at the metal–insulator transition in epitaxial manganite thin films

2002 ◽  
Vol 81 (2) ◽  
pp. 319-321 ◽  
Author(s):  
A. de Andrés ◽  
S. Taboada ◽  
J. M. Colino ◽  
R. Ramı́rez ◽  
M. Garcı́a-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Low Field

scholarly journals Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5158-5165 ◽  
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim
Keyword(s):  
Sol Gel ◽  
Insulator Transition ◽  
In Situ Characterization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Nanowire Device ◽  
Sol Gel Synthesis

The single-VO2 nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.

Influence of Fe3O4 on metal–insulator transition temperature of La0.7Ca0.3MnO3 thin films

2019 ◽  
Vol 55 (1) ◽  
pp. 99-106
Author(s):  
Xiaofen Guan ◽  
Rongrong Ma ◽  
Guowei Zhou ◽  
Zhiyong Quan ◽  
G. A. Gehring ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator
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