Rapid crystallization of SiO2/Sb80Te20 nanocomposite multilayer films for phase-change memory applications

2011 ◽  
Vol 64 (7) ◽  
pp. 645-648 ◽  
Author(s):  
Changzhou Wang ◽  
Simian Li ◽  
Jiwei Zhai ◽  
Bo Shen ◽  
Mingcheng Sun ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Multilayer Films ◽  
Rapid Crystallization ◽  
Memory Applications ◽  
Change Memory

Si/SnSe2 Multilayer Films for Phase Change Memory Applications

2012 ◽  
Vol 140 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Mingcheng Sun ◽  
Yifeng Hu ◽  
Bo Shen ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Multilayer Films ◽  
Memory Applications ◽  
Change Memory

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

2011 ◽  
Vol 14 (7) ◽  
pp. H258 ◽  
Author(s):  
Changzhou Wang ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song ◽  
Mingcheng Sun ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Multilayer Films ◽  
Memory Applications ◽  
Change Memory

scholarly journals Scalability of Phase Change Materials in Nanostructure Template

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Wei Zhang ◽  
Biyun L. Jackson ◽  
Ke Sun ◽  
Jae Young Lee ◽  
Shyh-Jer Huang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Scaling Limit ◽  
Phase Change Memory ◽  
Leakage Power ◽  
Memory Element ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Memory Applications ◽  
Change Memory

The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.

Surface Oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications

2021 ◽  
pp. 151514
Author(s):  
Ludovic Goffart ◽  
Bernard Pelissier ◽  
Gauthier Lefèvre ◽  
Yannick Le–Friec ◽  
Christophe Vallée ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Surface Oxidation ◽  
N Doping ◽  
Memory Applications ◽  
Change Memory

Investigation of Ge2Sb2Te5/Si nano-multilayered films for phase-change memory applications

2016 ◽  
Vol 119 (4) ◽  
pp. 044901 ◽  
Author(s):  
Long Zheng ◽  
Xiaomin Gu ◽  
Ligang Ma ◽  
Xiaoshan Wu ◽  
Xiaoqin Zhu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Multilayered Films ◽  
Memory Applications ◽  
Change Memory

scholarly journals Atomic layer deposition and tellurization of Ge–Sb film for phase-change memory applications

RSC Advances ◽  
2019 ◽  
Vol 9 (30) ◽  
pp. 17291-17298 ◽  
Author(s):  
Yewon Kim ◽  
Byeol Han ◽  
Yu-Jin Kim ◽  
Jeeyoon Shin ◽  
Seongyoon Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Phase Change Memory ◽  
Atomic Layer ◽  
Gap Filling ◽  
Layer Deposition ◽  
Memory Applications ◽  
Change Memory

We studied the atomic layer deposition (ALD) and the tellurization of Ge–Sb films to prepare conformal crystalline Ge–Sb–Te (GST) films and to achieve void-free gap filling for emerging phase-change memory applications.

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