Tuning the carrier concentration for thermoelectrical application in the quaternary Heusler compound Co2TiAl(1−x)Six

2010 ◽  
Vol 63 (9) ◽  
pp. 925-928 ◽  
Author(s):  
Tanja Graf ◽  
Joachim Barth ◽  
Benjamin Balke ◽  
Sascha Populoh ◽  
Anke Weidenkaff ◽  
...  
2017 ◽  
Vol 111 (12) ◽  
pp. 122104 ◽  
Author(s):  
Xiaoxiong Liu ◽  
Lei Li ◽  
Yvgui Cui ◽  
Jianbo Deng ◽  
Xiaoma Tao

2010 ◽  
Vol 63 (12) ◽  
pp. 1216-1219 ◽  
Author(s):  
Tanja Graf ◽  
Peter Klaer ◽  
Joachim Barth ◽  
Benjamin Balke ◽  
Hans-Joachim Elmers ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (65) ◽  
pp. 39731-39738
Author(s):  
Jiaying Ji ◽  
Qijia Gu ◽  
Rabah Khenata ◽  
Fayang Guo ◽  
Yanfeng Wang ◽  
...  

The equiatomic quaternary Heusler compound TiZnMnSi exhibits strong tendency to tetragonal phase transformation.


2019 ◽  
Vol 15 ◽  
pp. 102533 ◽  
Author(s):  
Zhou Cui ◽  
Bo Wu ◽  
Xin Ruan ◽  
Qiwen Zhou ◽  
Zhenyan Liu ◽  
...  

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1637 ◽  
Author(s):  
Lihong Huang ◽  
Junchen Wang ◽  
Xiaobo Mo ◽  
Xiaobo Lei ◽  
Sude Ma ◽  
...  

The effects of V vacancy on the thermoelectric performance of the half-Heusler compound VCoSb have been investigated in this study. A certain amount of CoSb secondary phase is generated in the VCoSb matrix when the content of V vacancy is more than 0.1 at%. According to the results, a ZT value of 0.6, together with a power factor of 29 μW cm−1 K−2 at 873 K, were achieved for the nonstoichiometric sample V0.9CoSb. This proved that moderate V vacancy could improve the thermoelectric (TE) properties of VCoSb. The noticeable improvements are mainly owing to the incremental Seebeck coefficient, which may benefit from the optimized carrier concentration. However, too much V vacancy will result in more CoSb impurity and deteriorate the TE performances of VCoSb owing to the increased thermal conductivity.


2018 ◽  
Vol 735 ◽  
pp. 950-958 ◽  
Author(s):  
H. Kara ◽  
M. Upadhyay Kahaly ◽  
K. Özdoğan

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