A methodology for Monte Carlo simulation of recrystallization in an overaged and cold-rolled precipitation-hardenable aluminum alloy

2010 ◽  
Vol 63 (1) ◽  
pp. 4-7 ◽  
Author(s):  
P. Sepehrband ◽  
S. Esmaeili
2012 ◽  
Vol 715-716 ◽  
pp. 480-485 ◽  
Author(s):  
Ali Reza Eivani ◽  
Jie Zhou ◽  
Jurek Duczczyk

In this research, recrystallization of AA7020 aluminum alloy after hot compression testing was predicted using a framework being a combination of physical modeling and Monte Carlo simulation. Stored energy was calculated as a function of subgrain size related to the Zener Hollomon parameter. The as-deformed grain structure was mapped into the Monte Carlo simulation from experimental results. Calculated stored energy was assigned to the mapped structure, considering the length scale of the simulation. Results were validated by comparing the microstructures obtained from the model predictions with those from experimental results and a reasonable agreement was reached. The predicted grain size was found to be 15 % smaller than the experimental values. Predicted fractions recrystallized showed a similar trend to the experimental results. However, a discrepancy between the model predictions and experimental results in terms of recrystallization kinetics was found, which was attributed to neglecting the effect of subgrain growth and resulting reduction of the stored energy during recovery on the recrystallization kinetics in the present simulation.


2007 ◽  
Vol 558-559 ◽  
pp. 377-382 ◽  
Author(s):  
Sheng Yu Wang ◽  
Anthony D. Rollett

The subgrain structure of hot rolled aluminum alloy AA 5005 has been characterized on as-received samples using Electron Backscatter Diffraction (EBSD). Based on the OIM scans of RD-ND and TD-ND, 3 dimensional microstructures of subgrains are built up using the 3D Microstructure Builder, which is a method for developing statistically representative digital representations of microstructures. Following the generation of microstructure, different textures were fit to these reconstructed 3D microstructures, based on individual components such as Brass and S textures. For this study, the Brass texture was chosen as an exemplary case. Monte Carlo simulation was used to model subgrain coarsening and visualization was a key to detecting abnormal grain growth. The main objective is to understand the circumstances under which we can expect abnormal (sub-)grain growth to lead to nucleation of recrystallization.


Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.


Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.


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