Mechanical characterization of chemical-vapor-deposited polycrystalline 3C silicon carbide thin films

2008 ◽  
Vol 59 (9) ◽  
pp. 995-998 ◽  
Author(s):  
Sharvani Nagappa ◽  
Marc Zupan ◽  
C.A. Zorman
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Mechanical Characterization ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Thermal Behavior ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicon Compounds ◽  
Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

Hot wire chemical vapor deposited multiphase silicon carbide (SiC) thin films at various filament temperatures

2016 ◽  
Vol 27 (12) ◽  
pp. 12340-12350 ◽  
Author(s):  
Amit Pawbake ◽  
Vaishali Waman ◽  
Ravindra Waykar ◽  
Ashok Jadhavar ◽  
Ajinkya Bhorde ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Chemical Vapor Deposited

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

2003 ◽  
Vol 82 (7) ◽  
pp. 1084-1086 ◽  
Author(s):  
Hae-Jeong Lee ◽  
Eric K. Lin ◽  
Barry J. Bauer ◽  
Wen-li Wu ◽  
Byung Keun Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

A Nanoindentation-Based Microbridge Testing Method for Mechanical Characterization of Thin Films for MEMS Applications

2005 ◽  
Author(s):  
Zhiqiang Cao ◽  
Tong-Yi Zhang ◽  
Xin Zhang
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Young’S Modulus ◽  
Microelectromechanical Systems ◽  
Mechanical Characterization ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Testing Method ◽  
Chemical Vapor Deposited

Plasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young’s modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young’s modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. The results showed that the as-deposited PECVD SiOx films had a residual stress of −155±17 MPa and a Young’s modulus of 74.8±3.3 GPa.

Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films

2003 ◽  
Vol 433-436 ◽  
pp. 451-454 ◽  
Author(s):  
Hoa Thi Mai Pham ◽  
Tolgay Akkaya ◽  
Charles R. de Boer ◽  
Pasqualina M. Sarro
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Chemical Vapor Deposited

Tribological characterization of chemical vapor deposited Co and Co 3 O 4 thin films for sensing reliability in engineering applications

2015 ◽  
Vol 82 ◽  
pp. 89-94 ◽  
Author(s):  
Elias P. Koumoulos ◽  
Vassileios Markakis ◽  
Vasiliki P. Tsikourkitoudi ◽  
Costas A. Charitidis ◽  
Nikolaos Papadopoulos ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Engineering Applications ◽  
Chemical Vapor Deposited ◽  
Tribological Characterization

Characterization of a Ceramic-Metal-Ceramic Bond: Chemical Vapor Deposited (CVD) Silicon Carbide Joined by a Silver-Based Active Brazing Alloy (ABA)

2002 ◽  
Vol 742 ◽  
Author(s):  
James V. Marzik ◽  
Toshi Oyama ◽  
Warren J. MoberlyChan ◽  
William J. Croft
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Copper Alloys ◽  
Chemical Vapor ◽  
Transmission Electron ◽  
Ceramic Bond ◽  
Sic Ceramic ◽  
Chemical Vapor Deposited ◽  
Sintered Silicon

ABSTRACTChemical vapor deposited (CVD) silicon carbide (SiC) ceramic material was joined to itself via an air stable, silver-based active brazing alloy (ABA). The microstructure and microchemistry of the interface was characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), and electron probe microanalysis (EPMA). Results were compared to previous studies on the active alloy brazing of sintered silicon carbide using higher copper alloys.

Mechanical Characterization of Polycrystalline and Amorphous Silicon Carbide Thin Films Using Bulge Test

2013 ◽  
Vol 22 (1) ◽  
pp. 140-146 ◽  
Author(s):  
Sreedevi Maruthoor ◽  
Ajesh Ajayakumar ◽  
Tino Fuchs ◽  
Oleg Jakovlev ◽  
Holger Reinecke ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Mechanical Characterization ◽  
Bulge Test ◽  
Amorphous Silicon Carbide
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