In situ formation of dual amorphous phases with nanoscale fractal morphology by ion beam mixing in the ternary Y–Nb–Co system

2007 ◽  
Vol 57 (7) ◽  
pp. 583-586 ◽  
Author(s):  
W.C. Wang ◽  
H.F. Yan ◽  
J.H. Li ◽  
F. Zeng ◽  
B.X. Liu
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
Amorphous Phases ◽  
In Situ Formation

Ion-beam mixing of Ni/Pd layers: I. Cascade mixing regime (low temperature)

1988 ◽  
Vol 3 (6) ◽  
pp. 1057-1062 ◽  
Author(s):  
U. G. Akano ◽  
D. A. Thompson ◽  
J. A. Davies ◽  
W. W. Smeltzer
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Heavy Ion ◽  
Square Root ◽  
Ion Beam Mixing ◽  
Dose Comparison ◽  
Mixing Regime ◽  
Constant Dose ◽  
Constant Dose Rate

A tomic mixing resulting from heavy-ion bombardment of thin-film Ni/Pd bilayers and thin Pd markers sandwiched between Ni layers has been investigated. Mixing experiments were performed over a temperature range 40–473 K, using 120 keV Ar+ and 145 keV Kr+ ions at a constant dose rate of 5.5 × 1012 ions cm −2s−1 for doses up to 4 × 1016cm−2. The resulting interdiffusion was measured, in situ, using Rutherford backscattering with 2−2.8 MeV 4He+ ions. The results showed that, for both markers and bilayers, the amount of mixing is similar for both configurations and varies linearly with the square root of the ion dose. Comparison of the induced mixing per ion, following irradiation at 40 K, shows that the mixing is dependent on the damage energy FD deposited at the interface region. The mixing is essentially athermal.

Ion Mixing Kinetics of Thin Layered Films in the Fe-Al System

1983 ◽  
Vol 27 ◽  
Author(s):  
J. Grilhe ◽  
J.P. Riviere ◽  
J. Delafond ◽  
C. Jaouen
Keyword(s):  
Composition Range ◽  
Volume Fraction ◽  
Ion Beam ◽  
Mixed Volume ◽  
Low Doses ◽  
Ion Beam Mixing ◽  
Resistivity Measurements ◽  
Semi Empirical ◽  
Kinetics Of

ABSTRACTEvaporated bilayers and multilayers of Fe and Al have been studied during ion beam mixing with Xe ions using in-situ electrical resistivity measurements. Experiments have been performed in the composition range 40 – 58 at.% Al and at both temperatures 77 K and 300 K. A semi-empirical model is proposed to explain the observed kinetics. At low doses, a square root dependence of the mixed volume fraction on dose is found at 77 K but not at 300 K. The results are discussed by comparison with the different models proposed for ion beam mixing.

Temperature Dependence of Ion Beam Mixing in Al

1981 ◽  
Vol 7 ◽  
Author(s):  
S.T. Picraux ◽  
D. M. Follstaedt ◽  
J. Delafond
Keyword(s):  
Low Temperatures ◽  
Driving Forces ◽  
Ion Beam ◽  
Slow Motion ◽  
Ion Beam Mixing ◽  
Depth Profiles ◽  
Mixing Rates ◽  
Atomic Mixing ◽  
Concentration Depth Profiles

ABSTRACTThe atomic mixing of evaporated Al/Sb films and of Al/Ag films on Al<110> crystal substrates by 400 keV Xe ion beams has been investigated. Concentration depth profiles were measured in situ by 1.5 MeV He scattering as a function of Xe fluence from 2 to 32×1015 Xe/cm2. The initial mixing rates are similar at 85 and 300 K; mixing proceeds by rapid motion of Al (≈15 Al/Xe) into and uniformly through the thickness of the Sb film and by a slow motion of Sb (≈0.5 Sb/Xe) into the Al<110> substrate. More rapid Sb mixing into Al occurs for polycrystalline Al. The rate for Al into Sb slows at concentrations approaching the stable AlSb phase. Appreciably higher rates of Sb mixing into Al (2.2 to 2.8 Sb/Xe) occur at 575 K. Mixing rates for the highly soluble system, Al/Ag, are compared to the nearly insoluble Al/Sb at 85 and 300 K. Appreciably higher rates are found for Ag than for Sb, suggesting the influence of chemical driving forces even at these low temperatures.

Ion-Beam Mixing and Amorphization in Au/Zr Bilayers

1988 ◽  
Vol 100 ◽  
Author(s):  
Fu-Rong Ding ◽  
P. R. Okamoto ◽  
L. E. Rehn
Keyword(s):  
Electron Microscope ◽  
Ion Beam ◽  
Low Energy ◽  
Inert Gas ◽  
Arrhenius Behavior ◽  
Ion Beam Mixing ◽  
Bilayer Films ◽  
Voltage Electron ◽  
High Voltage Electron Microscope

ABSTRACTAu/Zr bilayer films with inert-gas markers were produced by low energy (< 4 keV) implantation. Mass transport was measured during ion-beam mixing with 1 MeV Kr at several temperatures between 330 and 540K. Two distinct regimes of apparent Arrhenius behavior were found with activation enthalpies of 0.06 and 0.9 eV in the temperature range 330–440K and 460–540K, respectively. Microstructural changes during ion-beam mixing were studied in situ, in a high voltage electron microscope. Heterogeneous nucleation of an amorphous phase was observed during mixing. The results are compared with similar studies reported previously in Ni/Zr bilayer specimens.

Fractal morphologies of dual amorphous phases observed in Y–Ti(Nb)–Co ternary systems upon ion beam mixing

2009 ◽  
Vol 478 (1-2) ◽  
pp. L28-L32
Author(s):  
W.C. Wang ◽  
J.H. Li ◽  
F. Zeng ◽  
Y.L. Gu ◽  
B.X. Liu
Keyword(s):  
Ion Beam ◽  
Ternary Systems ◽  
Ion Beam Mixing ◽  
Amorphous Phases

In situ RBS analysis of ion beam mixing during low energy sputtering

1993 ◽  
Vol 79 (1-4) ◽  
pp. 446-449 ◽  
Author(s):  
B. Brijs ◽  
H. Bender ◽  
W. De Coster ◽  
R. Moons ◽  
W. Vandervorst
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Mixing

scholarly journals Ion-Beam Mixing in Amorphous and Crystalline Fe-Ti

1988 ◽  
Vol 128 ◽  
Author(s):  
Udo Scheuer ◽  
Lynn E. Rehn ◽  
Pete Baldo
Keyword(s):  
Amorphous Materials ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Rutherford Back Scattering ◽  
Enhanced Diffusion ◽  
Voltage Electron ◽  
Radiation Enhanced Diffusion ◽  
Bcc Phase ◽  
Ti Films

ABSTRACTCrystalline Fe and Fe-10at.%Ti and amorphous Fe-37at.%Ti films with Ag and Hf markers were produced by vapor deposition. Marker spreading during ion-beam mixing between 77 K and 580 K was measured using Rutherford Back-scattering (RBS). Marker spreading was also measured between temperatures of 300 K to 700 K after full crystallization of the Fe-37at.%Ti films. Microstructural changes during ion-beam mixing were studied in situ, in a High-Voltage Electron Microscope. Homogeneous nucleation of a metastable bcc phase, was observed at high temperatures. The results are discussed in terms of their relevance to “radiation-enhanced” diffusion in amorphous materials.

Solid-state amorphization, interdiffusion, and ion-beam mixing in Au/Zr and Ni/Zr

1989 ◽  
Vol 4 (6) ◽  
pp. 1444-1449 ◽  
Author(s):  
Fu-Rong Ding ◽  
P. R. Okamoto ◽  
L. E. Rehn
Keyword(s):  
Solid State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Bilayer Films ◽  
Voltage Electron ◽  
Radiation Enhanced Diffusion

Inert-gas markers, Rutherford backscattering, and x-ray diffraction were used to investigate solid-state interdiffusion in Ni/Zr and Au/Zr bilayer films as a function of temperature; microstructural studies during annealing were performed in situ, in a high-voltage electron microscope. Au, in contrast to Ni, is not an anomalously fast diffuser in crystalline Zr. Nevertheless, an amorphous product phase was found in both alloy systems for reaction temperatures  550 K; heterogeneous nucleation of the amorphous phase was observed in Au/Zr. The interdiffusion data reveal two distinct Arrhenius regimes, 330–∼470 K and ∼480–550 K, with quite different apparent activation enthalpies. These thermal interdiffusion results are compared with temperature dependent studies of ion-beam mixing in similar bilayer specimens. This comparison indicates that the enhanced efficiencies observed for ion-beam mixing above ∼480 K result from the as-prepared metastable microstructurc, and are not due to radiation-enhanced diffusion.

In situ formation of two amorphous phases by liquid phase separation in Y–Ti–Al–Co alloy

2004 ◽  
Vol 85 (26) ◽  
pp. 6353-6355 ◽  
Author(s):  
B. J. Park ◽  
H. J. Chang ◽  
D. H. Kim ◽  
W. T. Kim
Keyword(s):  
Phase Separation ◽  
Liquid Phase ◽  
Liquid Phase Separation ◽  
Amorphous Phases ◽  
In Situ Formation
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