Temperature dependence of the first-order Raman scattering in silicon nanowires

2006 ◽  
Vol 55 (2) ◽  
pp. 183-186 ◽  
Author(s):  
J NIU ◽  
J SHA ◽  
D YANG
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Silicon Nanowires ◽  
First Order

Enhanced first-order Raman scattering from arrays of vertical silicon nanowires

2012 ◽  
Vol 23 (27) ◽  
pp. 275706 ◽  
Author(s):  
M Khorasaninejad ◽  
J Walia ◽  
S S Saini
Keyword(s):  
Raman Scattering ◽  
Silicon Nanowires ◽  
First Order

Temperature Dependence of First-Order Raman Scattering in CuGaS2

1993 ◽  
Vol 32 (S3) ◽  
pp. 578 ◽  
Author(s):  
J. González ◽  
J. Guinet ◽  
H. Fontaine ◽  
W. Longueville
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
First Order

scholarly journals Temperature dependence of the first-order Raman scattering in GaS layered crystals

2000 ◽  
Vol 116 (3) ◽  
pp. 147-151 ◽  
Author(s):  
N.M. Gasanly ◽  
A. Aydınlı ◽  
H. Özkan ◽  
C. Kocabaş
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
First Order ◽  
Layered Crystals

Temperature dependence of first- and second-order Raman scattering in silicon nanowires

2010 ◽  
Vol 247 (11-12) ◽  
pp. 3084-3088 ◽  
Author(s):  
S. Khachadorian ◽  
H. Scheel ◽  
A. Colli ◽  
A. Vierck ◽  
C. Thomsen
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence ◽  
Silicon Nanowires ◽  
Second Order

A kinetic standard for precise calibration of spectrophotometer cell temperature.

1981 ◽  
Vol 27 (5) ◽  
pp. 753-755 ◽  
Author(s):  
P A Adams ◽  
M C Berman
Keyword(s):  
Temperature Dependence ◽  
Rate Constants ◽  
Cell Temperature ◽  
First Order ◽  
Order Rate ◽  
Acid Catalyzed ◽  
Pseudo First Order ◽  
Hydrolysis Of

Abstract We describe a simple, highly reproducible kinetic technique for precisely measuring temperature in spectrophotometric systems having reaction cells that are inaccessible to conventional temperature probes. The method is based on the temperature dependence of pseudo-first-order rate constants for the acid-catalyzed hydrolysis of N-o-tolyl-D-glucosylamine. Temperatures of reaction cuvette contents are measured with a precision of +/- 0.05 degrees C (1 SD).

Temperature dependence of Raman scattering from 4H-SiC with hexagonal defects

2011 ◽  
Vol 99 (1) ◽  
pp. 011912 ◽  
Author(s):  
R. Han ◽  
B. Han ◽  
D. H. Wang ◽  
C. Li
Keyword(s):  
Raman Scattering ◽  
Temperature Dependence
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