Surface and interface segregation in β-NiAl with and without Pt addition

2006 ◽  
Vol 54 (5) ◽  
pp. 937-941 ◽  
Author(s):  
P.Y. Hou ◽  
K.F. McCarty
Keyword(s):  
Surface And Interface ◽  
Interface Segregation

Studies of surface and interface segregation in polymer blends by secondary ion mass spectrometry

1992 ◽  
Vol 76 (4) ◽  
pp. 937-950 ◽  
Author(s):  
S.A. Schwarz ◽  
B.J. Wilkens ◽  
M.A.A. Pudensi ◽  
M.H. Rafailovich ◽  
J. Sokolov ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Polymer Blends ◽  
Secondary Ion Mass Spectrometry ◽  
Surface And Interface ◽  
Ion Mass Spectrometry ◽  
Interface Segregation ◽  
Secondary Ion

Kinetics of surface and interface segregation in stressed nano-films on inert substrate

2021 ◽  
Vol 129 (18) ◽  
pp. 185305
Author(s):  
Songyou Lian ◽  
Yi Yan ◽  
Jacobus J. Terblans ◽  
Hendrik C. Swart ◽  
Jiangyong Wang ◽  
...  
Keyword(s):  
Surface And Interface ◽  
Inert Substrate ◽  
Interface Segregation ◽  
Kinetics Of

A Neutron Reflectivity Investigation of Surface and Interface Segregation of Polymer Functional End Groups

1994 ◽  
Vol 27 (19) ◽  
pp. 5341-5349 ◽  
Author(s):  
J. F. Elman ◽  
B. D. Johs ◽  
T. E. Long ◽  
J. T. Koberstein
Keyword(s):  
Neutron Reflectivity ◽  
Surface And Interface ◽  
End Groups ◽  
Interface Segregation

scholarly journals Resistivity Reduction and Adhesion Increase Induced by Surface and Interface Segregation of Ti Atoms in Cu(Ti) Alloy Films on Glass Substrates

2010 ◽  
Vol 51 (9) ◽  
pp. 1627-1632 ◽  
Author(s):  
Shuji Uehara ◽  
Kazuhiro Ito ◽  
Kazuyuki Kohama ◽  
Takashi Onishi ◽  
Yasuharu Shirai ◽  
...  
Keyword(s):  
Ti Alloy ◽  
Alloy Films ◽  
Surface And Interface ◽  
Glass Substrates ◽  
Interface Segregation

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

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